SST25PF040B-80-4C-SAE datasheet, PDF

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SST25PF040B-80-4C-SAE: DescriptionLDO Voltage Regulators 1.8V 0.8A Positive; Categorystorage storage; File Size246KB，32 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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SST25PF040B-80-4C-SAE Overview

LDO Voltage Regulators 1.8V 0.8A Positive

SST25PF040B-80-4C-SAE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microchip
package instruction	SOIC-8
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum clock frequency (fCLK)	80 MHz
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
length	4.9 mm
memory density	4194304 bit
Memory IC Type	FLASH
memory width	1
Humidity sensitivity level	3
Number of functions	1
Number of terminals	8
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX1
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
Programming voltage	2.7 V
Filter level	TS 16949
Maximum seat height	1.75 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	3.9 mm

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Obsolete Device

Please use SST25VF040B

SST25PF040B

4 Mbit 2.3-3.6V SPI Serial Flash

Features

• Single Voltage Read and Write Operations

- 2.3–3.6V

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• High Speed Clock Frequency

- 80 MHz (2.7-3.6V operation)

- 50 MHz (2.3-2.7V operation)

• Superior Reliability

- Endurance: 100,000 Cycles (typical)

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read Current: 10 mA (typical)

- Standby Current: 5

μA

(typical)

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Uniform 32 KByte overlay blocks

- Uniform 64 KByte overlay blocks

• Fast Erase and Byte-Program:

- Chip-Erase Time: 35 ms (typical)

- Sector-/Block-Erase Time: 18 ms (typical)

- Byte-Program Time: 7

μs

(typical)

• Auto Address Increment (AAI) Programming

- Decrease total chip programming time over

Byte-Program operations

• End-of-Write Detection

- Software polling the BUSY bit in Status Register

- Busy Status readout on SO pin in AAI Mode

• Hold Pin (HOLD#)

- Suspends a serial sequence to the memory

without deselecting the device

• Write Protection (WP#)

- Enables/Disables the Lock-Down function of the

status register

• Software Write Protection

- Write protection through Block-Protection bits in

status register

• Temperature Range

- Commercial: 0°C to +70°C

• Packages Available

- 8-lead SOIC (150 mils)

- 8-lead SOIC (200 mils)

- 8-contact WSON (6mm x 5mm)

• All devices are RoHS compliant

Product Description

The 25 series Serial Flash family features a four-wire,

SPI-compatible interface that allows for a low pin-count

package which occupies less board space and ulti-

mately lowers total system costs. The SST25PF040B

devices are enhanced with improved operating fre-

quency and lower power consumption. SST25PF040B

SPI serial flash memories are manufactured with pro-

prietary, high-performance CMOS SuperFlash technol-

ogy. The split-gate cell design and thick-oxide tunneling

injector attain better reliability and manufacturability

compared with alternate approaches.

The SST25PF040B devices significantly improve per-

formance and reliability, while lowering power con-

sumption. The devices write (Program or Erase) with a

single power supply of 2.3-3.6V for SST25PF040B.

The total energy consumed is a function of the applied

voltage, current, and time of application. Since for any

given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time,

the total energy consumed during any Erase or Pro-

gram operation is less than alternative flash memory

technologies.

The SST25PF040B device is offered in an 8-lead SOIC

(150 mils), 8-lead SOIC (200 mils), and 8-contact

WSON (6mm x 5mm) packages. See

Figure 2-1

for pin

assignments.



2014 Microchip Technology Inc.

DS20005134B-page 1

SST25PF040B-80-4C-SAE Related Products

	SST25PF040B-80-4C-SAE	SST25PF040B-80-4C-QAE-T	SST25PF040B-80-4C-S2AE-T
Description	LDO Voltage Regulators 1.8V 0.8A Positive	Flash Memory	Flash Memory
Is it Rohs certified?	conform to	conform to	conform to
Maker	Microchip	Microchip	Microchip
package instruction	SOIC-8	HVSON,	SOIC-8
Reach Compliance Code	unknown	unknown	unknown
Maximum clock frequency (fCLK)	80 MHz	80 MHz	80 MHz
JESD-30 code	R-PDSO-G8	R-PDSO-N8	S-PDSO-G8
JESD-609 code	e3	e3	e3
length	4.9 mm	6 mm	5.275 mm
memory density	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	FLASH	FLASH	FLASH
memory width	1	1	1
Number of functions	1	1	1
Number of terminals	8	8	8
word count	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	4MX1	4MX1	4MX1
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	HVSON	SOP
Package shape	RECTANGULAR	RECTANGULAR	SQUARE
Package form	SMALL OUTLINE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE
Parallel/Serial	SERIAL	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED
Programming voltage	2.7 V	2.7 V	2.7 V
Filter level	TS 16949	TS 16949	TS 16949
Maximum seat height	1.75 mm	0.8 mm	2.16 mm
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	NO LEAD	GULL WING
Terminal pitch	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED
width	3.9 mm	5 mm	5.275 mm

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