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SST25PF040B-80-4C-S2AE-T

Description
Flash Memory
Categorystorage    storage   
File Size246KB,32 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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SST25PF040B-80-4C-S2AE-T Overview

Flash Memory

SST25PF040B-80-4C-S2AE-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrochip
package instructionSOIC-8
Reach Compliance Codeunknown
Maximum clock frequency (fCLK)80 MHz
JESD-30 codeS-PDSO-G8
JESD-609 codee3
length5.275 mm
memory density4194304 bit
Memory IC TypeFLASH
memory width1
Number of functions1
Number of terminals8
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX1
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeSQUARE
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage2.7 V
Filter levelTS 16949
Maximum seat height2.16 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width5.275 mm
Obsolete Device
Please use SST25VF040B
SST25PF040B
4 Mbit 2.3-3.6V SPI Serial Flash
Features
• Single Voltage Read and Write Operations
- 2.3–3.6V
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
- 80 MHz (2.7-3.6V operation)
- 50 MHz (2.3-2.7V operation)
• Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read Current: 10 mA (typical)
- Standby Current: 5
μA
(typical)
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 32 KByte overlay blocks
- Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
- Chip-Erase Time: 35 ms (typical)
- Sector-/Block-Erase Time: 18 ms (typical)
- Byte-Program Time: 7
μs
(typical)
• Auto Address Increment (AAI) Programming
- Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
- Software polling the BUSY bit in Status Register
- Busy Status readout on SO pin in AAI Mode
• Hold Pin (HOLD#)
- Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
- Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
- Write protection through Block-Protection bits in
status register
• Temperature Range
- Commercial: 0°C to +70°C
• Packages Available
- 8-lead SOIC (150 mils)
- 8-lead SOIC (200 mils)
- 8-contact WSON (6mm x 5mm)
• All devices are RoHS compliant
Product Description
The 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ulti-
mately lowers total system costs. The SST25PF040B
devices are enhanced with improved operating fre-
quency and lower power consumption. SST25PF040B
SPI serial flash memories are manufactured with pro-
prietary, high-performance CMOS SuperFlash technol-
ogy. The split-gate cell design and thick-oxide tunneling
injector attain better reliability and manufacturability
compared with alternate approaches.
The SST25PF040B devices significantly improve per-
formance and reliability, while lowering power con-
sumption. The devices write (Program or Erase) with a
single power supply of 2.3-3.6V for SST25PF040B.
The total energy consumed is a function of the applied
voltage, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time,
the total energy consumed during any Erase or Pro-
gram operation is less than alternative flash memory
technologies.
The SST25PF040B device is offered in an 8-lead SOIC
(150 mils), 8-lead SOIC (200 mils), and 8-contact
WSON (6mm x 5mm) packages. See
Figure 2-1
for pin
assignments.
2014 Microchip Technology Inc.
DS20005134B-page 1

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Description Flash Memory Flash Memory LDO Voltage Regulators 1.8V 0.8A Positive
Is it Rohs certified? conform to conform to conform to
Maker Microchip Microchip Microchip
package instruction SOIC-8 HVSON, SOIC-8
Reach Compliance Code unknown unknown unknown
Maximum clock frequency (fCLK) 80 MHz 80 MHz 80 MHz
JESD-30 code S-PDSO-G8 R-PDSO-N8 R-PDSO-G8
JESD-609 code e3 e3 e3
length 5.275 mm 6 mm 4.9 mm
memory density 4194304 bit 4194304 bit 4194304 bit
Memory IC Type FLASH FLASH FLASH
memory width 1 1 1
Number of functions 1 1 1
Number of terminals 8 8 8
word count 4194304 words 4194304 words 4194304 words
character code 4000000 4000000 4000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 4MX1 4MX1 4MX1
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP HVSON SOP
Package shape SQUARE RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE
Parallel/Serial SERIAL SERIAL SERIAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 260
Programming voltage 2.7 V 2.7 V 2.7 V
Filter level TS 16949 TS 16949 TS 16949
Maximum seat height 2.16 mm 0.8 mm 1.75 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.3 V 2.3 V 2.3 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING NO LEAD GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED 40
width 5.275 mm 5 mm 3.9 mm
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