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MCM67H618AFN9

Description
64K x 18 Bit BurstRAM Synchronous Fast Static RAM
Categorystorage    storage   
File Size111KB,12 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MCM67H618AFN9 Overview

64K x 18 Bit BurstRAM Synchronous Fast Static RAM

MCM67H618AFN9 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Parts packaging codeLCC
package instructionQCCJ, LDCC52,.8SQ
Contacts52
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time9 ns
Other featuresSELF-TIMED WRITE; BURST COUNTER; BYTE WRITE
I/O typeCOMMON
JESD-30 codeS-PQCC-J52
JESD-609 codee0
length19.1262 mm
memory density1179648 bit
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of ports1
Number of terminals52
word count65536 words
character code64000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX18
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC52,.8SQ
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum seat height4.57 mm
Maximum standby current0.095 A
Minimum standby current4.75 V
Maximum slew rate0.275 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyBICMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
width19.1262 mm

MCM67H618AFN9 Related Products

MCM67H618AFN9 MCM67H618AFN12 MCM67H618A MCM67H618AFN10
Description 64K x 18 Bit BurstRAM Synchronous Fast Static RAM 64K x 18 Bit BurstRAM Synchronous Fast Static RAM 64K x 18 Bit BurstRAM Synchronous Fast Static RAM 64K x 18 Bit BurstRAM Synchronous Fast Static RAM
Maker Motorola ( NXP ) Motorola ( NXP ) - Motorola ( NXP )
Parts packaging code LCC LCC - LCC
package instruction QCCJ, LDCC52,.8SQ QCCJ, LDCC52,.8SQ - QCCJ, LDCC52,.8SQ
Contacts 52 52 - 52
Reach Compliance Code unknown unknown - unknown
ECCN code 3A991.B.2.A 3A991.B.2.A - 3A991.B.2.A
Maximum access time 9 ns 12 ns - 10 ns
Other features SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE - SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE
I/O type COMMON COMMON - COMMON
JESD-30 code S-PQCC-J52 S-PQCC-J52 - S-PQCC-J52
JESD-609 code e0 e0 - e0
length 19.1262 mm 19.1262 mm - 19.1262 mm
memory density 1179648 bit 1179648 bit - 1179648 bit
Memory IC Type CACHE SRAM CACHE SRAM - CACHE SRAM
memory width 18 18 - 18
Number of functions 1 1 - 1
Number of ports 1 1 - 1
Number of terminals 52 52 - 52
word count 65536 words 65536 words - 65536 words
character code 64000 64000 - 64000
Operating mode SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C - 70 °C
organize 64KX18 64KX18 - 64KX18
Output characteristics 3-STATE 3-STATE - 3-STATE
Exportable YES YES - YES
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
encapsulated code QCCJ QCCJ - QCCJ
Encapsulate equivalent code LDCC52,.8SQ LDCC52,.8SQ - LDCC52,.8SQ
Package shape SQUARE SQUARE - SQUARE
Package form CHIP CARRIER CHIP CARRIER - CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL - PARALLEL
power supply 5 V 5 V - 5 V
Certification status Not Qualified Not Qualified - Not Qualified
Maximum seat height 4.57 mm 4.57 mm - 4.57 mm
Maximum standby current 0.095 A 0.095 A - 0.095 A
Minimum standby current 4.75 V 4.75 V - 4.75 V
Maximum slew rate 0.275 mA 0.25 mA - 0.265 mA
Maximum supply voltage (Vsup) 5.25 V 5.25 V - 5.25 V
Minimum supply voltage (Vsup) 4.75 V 4.75 V - 4.75 V
Nominal supply voltage (Vsup) 5 V 5 V - 5 V
surface mount YES YES - YES
technology BICMOS BICMOS - BICMOS
Temperature level COMMERCIAL COMMERCIAL - COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form J BEND J BEND - J BEND
Terminal pitch 1.27 mm 1.27 mm - 1.27 mm
Terminal location QUAD QUAD - QUAD
width 19.1262 mm 19.1262 mm - 19.1262 mm
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