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MCM67H618AFN10

Description
64K x 18 Bit BurstRAM Synchronous Fast Static RAM
Categorystorage    storage   
File Size111KB,12 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MCM67H618AFN10 Overview

64K x 18 Bit BurstRAM Synchronous Fast Static RAM

MCM67H618AFN10 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Parts packaging codeLCC
package instructionQCCJ, LDCC52,.8SQ
Contacts52
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time10 ns
Other featuresSELF-TIMED WRITE; BURST COUNTER; BYTE WRITE
I/O typeCOMMON
JESD-30 codeS-PQCC-J52
JESD-609 codee0
length19.1262 mm
memory density1179648 bit
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of ports1
Number of terminals52
word count65536 words
character code64000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX18
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC52,.8SQ
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum seat height4.57 mm
Maximum standby current0.095 A
Minimum standby current4.75 V
Maximum slew rate0.265 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyBICMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
width19.1262 mm

MCM67H618AFN10 Related Products

MCM67H618AFN10 MCM67H618AFN9 MCM67H618AFN12 MCM67H618A
Description 64K x 18 Bit BurstRAM Synchronous Fast Static RAM 64K x 18 Bit BurstRAM Synchronous Fast Static RAM 64K x 18 Bit BurstRAM Synchronous Fast Static RAM 64K x 18 Bit BurstRAM Synchronous Fast Static RAM
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) -
Parts packaging code LCC LCC LCC -
package instruction QCCJ, LDCC52,.8SQ QCCJ, LDCC52,.8SQ QCCJ, LDCC52,.8SQ -
Contacts 52 52 52 -
Reach Compliance Code unknown unknown unknown -
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A -
Maximum access time 10 ns 9 ns 12 ns -
Other features SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE -
I/O type COMMON COMMON COMMON -
JESD-30 code S-PQCC-J52 S-PQCC-J52 S-PQCC-J52 -
JESD-609 code e0 e0 e0 -
length 19.1262 mm 19.1262 mm 19.1262 mm -
memory density 1179648 bit 1179648 bit 1179648 bit -
Memory IC Type CACHE SRAM CACHE SRAM CACHE SRAM -
memory width 18 18 18 -
Number of functions 1 1 1 -
Number of ports 1 1 1 -
Number of terminals 52 52 52 -
word count 65536 words 65536 words 65536 words -
character code 64000 64000 64000 -
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
Maximum operating temperature 70 °C 70 °C 70 °C -
organize 64KX18 64KX18 64KX18 -
Output characteristics 3-STATE 3-STATE 3-STATE -
Exportable YES YES YES -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code QCCJ QCCJ QCCJ -
Encapsulate equivalent code LDCC52,.8SQ LDCC52,.8SQ LDCC52,.8SQ -
Package shape SQUARE SQUARE SQUARE -
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER -
Parallel/Serial PARALLEL PARALLEL PARALLEL -
power supply 5 V 5 V 5 V -
Certification status Not Qualified Not Qualified Not Qualified -
Maximum seat height 4.57 mm 4.57 mm 4.57 mm -
Maximum standby current 0.095 A 0.095 A 0.095 A -
Minimum standby current 4.75 V 4.75 V 4.75 V -
Maximum slew rate 0.265 mA 0.275 mA 0.25 mA -
Maximum supply voltage (Vsup) 5.25 V 5.25 V 5.25 V -
Minimum supply voltage (Vsup) 4.75 V 4.75 V 4.75 V -
Nominal supply voltage (Vsup) 5 V 5 V 5 V -
surface mount YES YES YES -
technology BICMOS BICMOS BICMOS -
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form J BEND J BEND J BEND -
Terminal pitch 1.27 mm 1.27 mm 1.27 mm -
Terminal location QUAD QUAD QUAD -
width 19.1262 mm 19.1262 mm 19.1262 mm -
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