Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PBSS4041NT
60 V, 3.8 A NPN low V
CEsat
(BISS) transistor
Rev. 01 — 31 January 2010
Product data sheet
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PT.
1.2 Features
Very low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
t
p
≤
1 ms
I
C
= 3 A;
I
B
= 300 mA
[1]
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
46
Max
60
3.8
8
66
Unit
V
A
A
mΩ
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PBSS4041NT
60 V, 3.8 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
2
sym021
Simplified outline
3
Graphic symbol
3
1
3. Ordering information
Table 3.
Ordering information
Package
Name
PBSS4041NT
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
*BK
Type number
PBSS4041NT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
single pulse;
t
p
≤
1 ms
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
60
60
5
3.8
8
1
Unit
V
V
V
A
A
A
PBSS4041NT_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 31 January 2010
2 of 14
NXP Semiconductors
PBSS4041NT
60 V, 3.8 A NPN low V
CEsat
(BISS) transistor
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
≤
25
°C
[1]
[2]
[3]
Min
-
-
-
-
−55
−65
Max
390
660
1100
150
+150
+150
Unit
mW
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
[1]
[2]
[3]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
1.5
P
tot
(W)
1.0
006aab954
(1)
(2)
0.5
(3)
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS4041NT_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 31 January 2010
3 of 14
NXP Semiconductors
PBSS4041NT
60 V, 3.8 A NPN low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
-
-
-
-
Max
320
190
115
62
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.2
0.1
0.05
10
0.02
0.01
0.5
006aab955
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4041NT_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 31 January 2010
4 of 14
京公网安备 11010802033920号
EEWORLD
