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NESG3033M14-FB

Description
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size127KB,15 Pages
ManufacturerNEC Electronics
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NESG3033M14-FB Overview

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN

NESG3033M14-FB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-F4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.035 A
Collector-based maximum capacity0.25 pF
Collector-emitter maximum voltage4.3 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-F4
JESD-609 codee0
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON GERMANIUM
Base Number Matches1
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG3033M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ V
CE
= 2 V, I
C
= 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: f
max
= 110 GHz
• This product is improvement of ESD of NESG3032M14.
• 4-pin lead-less minimold (M14, 1208 PKG)
ORDERING INFORMATION
Part Number
NESG3033M14
Order Number
NESG3033M14-A
Package
4-pin lead-less minimold
(M14, 1208 PKG)
NESG3033M14-T3 NESG3033M14-T3-A
(Pb-Free)
Note
Quantity
50 pcs
(Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Note
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Base Current
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
Note 1
Ratings
5.0
4.3
12
35
150
150
−65
to +150
Unit
V
V
mA
mA
mW
°C
°C
V
CEO
I
B
Note 1
I
C
P
tot
Note 2
T
j
T
stg
Notes 1.
V
CBO
and I
B
are limited by the permissible current of the protection element.
2.
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10640EJ02V0DS (2nd edition)
Date Published May 2007 NS
Printed in Japan
The mark <R> shows major revised points.
2006, 2007
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

NESG3033M14-FB Related Products

NESG3033M14-FB NESG3033M14-T3FB NESG3033M14 NESG3033M14-T3-A NESG3033M14-A NESG3033M14-T3 NESG3033M14-AFB NESG3033M14-T3-AFB
Description RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN
Is it Rohs certified? incompatible incompatible incompatible conform to conform to incompatible incompatible incompatible
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics
package instruction SMALL OUTLINE, R-PDSO-F4 LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN SMALL OUTLINE, R-PDSO-F4 LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
Maximum collector current (IC) 0.035 A 0.035 A 0.035 A 0.035 A 0.035 A 0.035 A 0.035 A 0.035 A
Collector-based maximum capacity 0.25 pF 0.25 pF 0.25 pF 0.25 pF 0.25 pF 0.25 pF 0.25 pF 0.25 pF
Collector-emitter maximum voltage 4.3 V 4.3 V 4.3 V 4.3 V 4.3 V 4.3 V 4.3 V 4.3 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
highest frequency band L BAND L BAND L BAND L BAND L BAND L BAND L BAND L BAND
JESD-30 code R-PDSO-F4 R-PDSO-F4 R-PDSO-F4 R-PDSO-F4 R-PDSO-F4 R-PDSO-F4 R-PDSO-F4 R-PDSO-F4
JESD-609 code e0 e0 e0 e3/e6 e6 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD MATTE TIN/TIN BISMUTH TIN BISMUTH TIN LEAD TIN LEAD TIN LEAD
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM

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