HC6364/1SCH-C datasheet, PDF - EEWORLD Datasheet

HC6364/1SCH-C: DescriptionStandard SRAM, 8KX8, 55ns, CMOS, CDIP28, CERAMIC, DIP-28; Categorystorage storage; File Size690KB，16 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

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HC6364/1SCH-C Overview

Standard SRAM, 8KX8, 55ns, CMOS, CDIP28, CERAMIC, DIP-28

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Honeywell
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	55 ns
Other features	RADIATION-HARDENED SRAM
I/O type	COMMON
JESD-30 code	R-CDIP-T28
JESD-609 code	e0
length	35.56 mm
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.445 mm
Maximum standby current	0.0003 A
Minimum standby current	2.5 V
Maximum slew rate	0.008 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
total dose	1M Rad(Si) V
width	15.24 mm

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