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ES2K

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size218KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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ES2K Overview

Rectifier Diode,

ES2K Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompliant
ECCN codeEAR99

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ES2A THRU ES2K 
 
RoHS
COMPLIANT
Surface Mount Super Fast Recovery Rectifier
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
High forward surge capability
Super Fast reverse recovery time
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in high frequency rectification of power supplies,
inverters, converters, and freewheeling diodes for consumer
and telecommunication.
Mechanical Data
Package:
DO-214AA (SMB)
 
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
 
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, resistance load, TL (Fig.1)
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Ta=25℃
Storage temperature
Junction temperature
V
RRM
I
O
I
FSM
T
stg
Tj
V
A
A
SYMBOL
UNIT
ES2A
ES2A
50
ES2B
ES2B
100
ES2C
ES2C
150
ES2D
ES2D
200
ES2F
ES2F
300
2.0
50
-55~+150
-55~+150
ES2G
ES2G
400
ES2H
ES2H
500
ES2J
ES2J
600
ES2K
ES2K
800
■Electrical
Characteristics
(T
a=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum reverse recovery time
Maximum DC reverse current
at rated DC blocking voltage
per diode @ V
RM
=V
RRM
SYMBOL UNIT
V
F
T
RR
V
ns
TEST
CONDITIONS
I
FM
=2.0A
I
F
=0.5A,I
R
=1.0A,
I
rr
=0.25A
Ta =25℃
I
RRM
μA
Ta =125℃
100
ES2A
ES2B
ES2C
ES2D
ES2F
ES2G
ES2H
ES2J
ES2K
1.85
0.95
35
5.0
1.3
1.7
1/5
S-S025
Rev. 2.6, 22-Oct-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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