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MJ2955

Description
15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size94KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MJ2955 Overview

15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA

MJ2955 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment115 W
Maximum power dissipation(Abs)115 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)2.5 MHz
VCEsat-Max3 V
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3055/D
Complementary Silicon Power
Transistors
. . . designed for general–purpose switching and amplifier applications.
DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc
Collector–Emitter Saturation Voltage —
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
MAXIMUM RATINGS
2N3055 *
PNP
MJ2955 *
*Motorola Preferred Device
NPN
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
115 WATTS
PD, POWER DISSIPATION (WATTS)
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Rating
Symbol
VCEO
VCER
VCB
VEB
IC
IB
Value
60
70
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
100
7
Collector Current — Continuous
Base Current
15
7
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
115
0.657
Watts
W/
_
C
Operating and Storage Junction Temperature
Range
TJ, Tstg
– 65 to + 200
CASE 1–07
TO–204AA
(TO–3)
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
Max
Unit
Thermal Resistance, Junction to Case
1.52
_
C/W
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
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