EEWORLDEEWORLDEEWORLD

Part Number

Search

FQI12N20L

Description
200V LOGIC N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size607KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FQI12N20L Overview

200V LOGIC N-Channel MOSFET

FQI12N20L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-262
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)210 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)11.6 A
Maximum drain current (ID)11.6 A
Maximum drain-source on-resistance0.32 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.5 W
Maximum pulsed drain current (IDM)46.4 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
FQB12N20L / FQI12N20L
February 2001
FQB12N20L / FQI12N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
11.6A, 200V, R
DS(on)
= 0.28Ω @V
GS
= 10 V
Low gate charge ( typical 16 nC)
Low Crss ( typical 17 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Low level gate drive requirement allowing direct
opration from logic drivers
D
D
!
"
G
S
G
!
! "
"
"
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB12N20L / FQI12N20L
200
11.6
7.35
46.4
±
20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
210
11.6
9.0
5.5
3.5
90
0.72
-55 to +150
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
1.39
40
62.5
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001

FQI12N20L Related Products

FQI12N20L FQB12N20L
Description 200V LOGIC N-Channel MOSFET 200V LOGIC N-Channel MOSFET
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
Parts packaging code TO-262 TO-263
package instruction IN-LINE, R-PSIP-T3 D2PAK-3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 210 mJ 210 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (Abs) (ID) 11.6 A 11.6 A
Maximum drain current (ID) 11.6 A 11.6 A
Maximum drain-source on-resistance 0.32 Ω 0.32 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-262AA TO-263AB
JESD-30 code R-PSIP-T3 R-PSSO-G2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 3.5 W 3.5 W
Maximum pulsed drain current (IDM) 46.4 A 46.4 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
TMS320F28379D User Experience SCI
1. Introduction to SCI SCI (Serial Communication Interface) means "serial communication interface", which is a general term for serial communication technology relative to parallel communication. It w...
Jacktang Microcontroller MCU
? A general question. How does this varactor diode represent?
I will just post a picture? ?...
btty038 PCB Design
How to use wire connectors?
In the electronics industry, what does a wire connector look like? How do you use it? I think many people don't know. This article will explain it to you. Wire connectors are a very important category...
zhuqi123456 Automotive Electronics
7.5KW motor hard start problem?
Recently, a friend wants to install a water pump with a motor power of 7.5KW (three-phase power supply 380V). He does not want to buy a soft starter or a frequency converter, but a hard starter. Does ...
bigbat Power technology
Detailed description of high-speed circuit PCB return path
It is said to be a high-speed circuit. At present, it seems that the theory is also common for high-speed signals. In short, you will find that the knowledge points are mutual. Without further ado, he...
ohahaha PCB Design
ADI & Shijian New Infrastructure Series Episode 2 - Answer the Energy Storage Questions to Win Gifts! Let's Start~
ADIShijian New Infrastructure Series Episode 2 - Answer the Energy Storage Questions to Win Gifts! Let's Start~Click here to enter the eventEnergy Storage and Power Conversion Analog Devices offers a ...
EEWORLD社区 Integrated technical exchanges

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号