FQB12N20L datasheet, PDF - EEWORLD Datasheet

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FQB12N20L: Description200V LOGIC N-Channel MOSFET; CategoryDiscrete semiconductor The transistor; File Size607KB，9 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FQB12N20L Overview

200V LOGIC N-Channel MOSFET

FQB12N20L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Fairchild
Parts packaging code	TO-263
package instruction	D2PAK-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	210 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	11.6 A
Maximum drain current (ID)	11.6 A
Maximum drain-source on-resistance	0.32 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	3.5 W
Maximum pulsed drain current (IDM)	46.4 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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FQB12N20L / FQI12N20L

February 2001

FQB12N20L / FQI12N20L

200V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supply, motor control.

Features

•

11.6A, 200V, R

DS(on)

= 0.28Ω @V

= 10 V

Low gate charge ( typical 16 nC)

Low Crss ( typical 17 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

Low level gate drive requirement allowing direct

opration from logic drivers

! "

-PAK

FQB Series

G D S

-PAK

FQI Series

Absolute Maximum Ratings

Symbol

DSS

GSS

dv/dt

= 25°C unless otherwise noted

Parameter

Drain-Source Voltage

- Continuous (T

= 25°C)

Drain Current

- Continuous (T

= 100°C)

Drain Current

- Pulsed

(Note 1)

FQB12N20L / FQI12N20L

200

11.6

7.35

46.4

(Note 2)

(Note 1)

(Note 3)

Units

V/ns

W/°C

°C

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T

= 25°C) *

210

11.6

9.0

5.5

3.5

0.72

-55 to +150

300

, T

STG

Power Dissipation (T

= 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

θJC

θJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

Typ

Max

1.39

62.5

Units

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A1, February 2001

FQB12N20L Related Products

	FQB12N20L	FQI12N20L
Description	200V LOGIC N-Channel MOSFET	200V LOGIC N-Channel MOSFET
Is it Rohs certified?	incompatible	incompatible
Maker	Fairchild	Fairchild
Parts packaging code	TO-263	TO-262
package instruction	D2PAK-3	IN-LINE, R-PSIP-T3
Contacts	3	3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	210 mJ	210 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (Abs) (ID)	11.6 A	11.6 A
Maximum drain current (ID)	11.6 A	11.6 A
Maximum drain-source on-resistance	0.32 Ω	0.32 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-262AA
JESD-30 code	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	3.5 W	3.5 W
Maximum pulsed drain current (IDM)	46.4 A	46.4 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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