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SC8205S

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 25mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 2W Type: Dual N-channel Dual N-channel, common drain. 20V, 6A, 25mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size362KB,3 Pages
ManufacturerFine Made Electronics Group Co., Ltd.
Websitehttp://www.superchip.cn/index.aspx
Shenzhen Fuman Electronics Group Co., Ltd. was founded in 2001. It is a national high-tech enterprise engaged in the design, development, packaging, testing and sales of high-performance analog and mixed-signal integrated circuits. It currently has more than 400 IC products in the consumer field, including power management, LED driver, MOSFET, etc.
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SC8205S Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 25mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 2W Type: Dual N-channel Dual N-channel, common drain. 20V, 6A, 25mΩ@10V

SC8205S Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C6A
Gate-source threshold voltage1.5V @ 250uA
Drain-source on-resistance25mΩ @ 5A,10V
Maximum power dissipation (Ta=25°C)2W
typeDual N-channel
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