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SB1240

Description
Rectifier Diode, Schottky, 1 Element, 12A, 40V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size82KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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SB1240 Overview

Rectifier Diode, Schottky, 1 Element, 12A, 40V V(RRM),

SB1240 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
Maximum non-repetitive peak forward current275 A
Number of components1
Maximum operating temperature200 °C
Maximum output current12 A
Maximum repetitive peak reverse voltage40 V
surface mountNO
technologySCHOTTKY

SB1240 Preview

SB1240
肖特基二极管
Schottky Diodes
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
(DO-201AD )
.375(9.50)
.335(8.50)
1.0(25.4)
MIN
1.0(25.4)
MIN
.197(5.00)
.048(1.20)
■用途
Applications
Unit: in inches (millimeters)
太阳½行业
Photovoltaic Solar cell Protection
Schottky Rectifier
■极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
平均整流输出电流
Average Rectified Output Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
正向浪涌电流的平方对电流浪涌持
续时间的积分值
Current Squared Time
储存温度
Storage Temperature
结温
Junction Temperature
符号
Symbol
V
RRM
I
o
I
FSM
单½
Unit
V
A
A
条件
Conditions
SB1240
40
60H
Z
正弦波,电阻负½½,T
a
=25℃
60H
Z
sine wave, R- load, T
a
=25℃
60H
Z
正弦波,一个周期,T
a
=25℃
60H
Z
sine wave, 1 cycle, T
a
=25℃
12
275
315
I
2
t
T
stg
A
2
s
1ms≤t<8.3ms T
j
=25℃
在正向直流条件下,没有½加反向压降,
通电≤1h(图示1)①
IN DC Forward Mode-Forward
Operations,without reverse bias, t
≤1
h (Fig. 1)①
-55 ~ +150
T
j
-55 ~ +200
■电特性 (T
a=25℃
除非另有规定)
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
参数名称
Item
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
热阻(典型)
Thermal Resistance(Typical)
符号
Symbol
VFM
IRRM1
IRRM2
单½
Unit
V
mA
测试条件
Test Condition
IFM=12.0A
Ta=25℃
V
RM
=V
RRM
T =100℃
最大值
Max
0.55
0. 5
20
R
θ
J-c
℃/W
结和壳之間
Between junction and case
3.0
备注
NOTE
① 符合第61215.2版旁路二极管热试验测试。
Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test.
Document Number 0185
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
DIA
耐正向浪涌½力高
High surge Forward current capability
½功耗,大电流
Low Power loss, High efficiency
IF
AV
)12.0A
40V
VRRM
.220(5.60)
.052(1.30)
SB1240
■特性曲线(典型)
Characteristics(Typical)
1
:正向电流降额曲线
FIG1: IF(AV)--Tc Derating
Io(A)
IFSM(A)
15.0
图2:耐正向浪涌电流曲线
FIG2:Surge Forward Current Capadility
360
300
240
8.3
毫秒正弦半波
8.3ms Single Half Since-Wave
JEDEC Method
12.0
9.0
IN DC
180
6.0
120
3.0
60
0
0
50
100
150
200
Ta(
)
0
1
2
10
20
周波数
100
Number of Cycles
IF(A)
100
I
RRM
(mA)
图3:正向电压曲线
FIG3:Instantaneous Forward Voltage
100
图4:反向电流曲线
FIG4:Typical Reverse Characteristics
10
10
Tj=100
Ta=25
1.0
1.0
0.1
Tj=25
0.1
0
0.2
0.4
0.6
0.8
1.0
VF(V)
0.01
0
20
40
60
80
100
V
RM
(%)
Document Number 0185
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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