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PJSD05TS-02-AU_L0_10001

Description
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
File Size124KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJSD05TS-02-AU_L0_10001 Overview

SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS

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PJSD05TS-02-AU
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
• 200 Watts peak pules power( tp=8/20
s)
• Small package for use in portable electronics
• IEC61000-4-2 8KV contact 15KV Air compliant
• Low clamping voltage and leakage current
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
• Acqire quality system certificate : TS16949
AEC-Q101 qualified
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
Polarity : Color band cathode
• Marking : KS
5 Volts
POWER
200 Watts
APPLICATIONS
• Video I/O ports protection
• Set Top Boxes
• Portable Instrumentation
1
Cathode
2
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power (tp=8/20
s)
Maximum Peak Pulse Current
ESD Voltage per HBM MIL-STD-883
Operating Junction and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Symbol
P
PP
I
PPM
V
ESD
T
J,
T
STG
Value
200
18
25
-50 to +150
Units
W
A
KV
O
C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20s)
Clamping Voltage(8/20s)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=5V
I
PP
=5A
I
PP
=15A
0Vdc
Bias=f=1MHz
5Vdc
Bias=f=1MHz
Min.
-
6.0
-
-
-
-
-
Typical
-
-
-
-
-
-
-
Max.
5
-
1
11
14
160
80
Units
V
V
A
V
V
pF
pF
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.0-DEC.24.2009
PAGE . 1
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