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MURS120

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size238KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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Rectifier Diode,

MURS120 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompli

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Download Datasheet
MURS120 THRU MURS160 
 
RoHS
COMPLIANT
Surface Mount Super Fast Recovery Rectifier
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Super Fast reverse recovery time
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in high frequency rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, and telecommunication.
Mechanical Data
Package:
DO-214AC(SMA)
 
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
 
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, resistance load, TL (Fig.1)
Surge(non-repetitive)forward current
@ 60Hz half-sine wave,1 cycle, Ta=25℃
Storage temperature
Junction temperature
VRRM
IO
V
A
SYMBOL
UNIT
MURS120
MURS120
200
MURS140
MURS140
400
1.0
MURS160
MURS160
600
IFSM
Tstg
Tj
A
30
-55~+150
-55~+150
Electrical Characteristics
(Ta=25℃
Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum reverse recovery time
SYMBOL
UNIT
TEST
CONDITIONS
IFM=1.0A
I
F
=0.5A,I
R
=1.0A,
I
rr
=0.25A
Ta =25℃
IRRM
μA
Ta =125℃
50
MURS120
MURS140
MURS160
VF
V
0.92
1.25
T
RR
ns
25
5.0
50
Maximum DC reverse current at
rated DC blocking voltage per
diode@ VRM=VRRM
1/5
S-S1208
Rev.1.3,05-Dec-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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