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MMST2222AF2

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size347KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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MMST2222AF2 Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,

MMST2222AF2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)285 ns
Maximum opening time (tons)40 ns

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MMST2222A
 
RoHS
 
COMPLIANT
NPN Transistor
Features
Epoxy meets UL-94 V-0 flammability rating
Moitsure Sensitivity Level 1
High Conductance
Surface Mount Package Ideally Suited for Automatic
Insertion
Package:
SOT-323
Molding compound meets UL 94 V-0 flammability rating,
RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Marking:
K3P
Mechanical Data
Maximum Ratings
(Ta=25℃ unless otherwise noted)
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
Symbol
BVCBO
BVCEO
BVEBO
IC
PD
Tj
TSTG
Unit
V
V
V
mA
mW
Value
75
40
6
600
200
150
-55 to +150
Electrical Characteristics
(Ta=25℃ unless otherwise noted)
Item
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
I
CEX
I
CBO
I
EBO
h
FE
Unit
V
V
V
nA
nA
nA
Conditions
IC=10uA,IE=0
IC =10mA,IB=0
IE=10μA,IC=0
VCE=60V, VBE=3V
VCE=60V, IC =0
VEB=3 V, IC =0
VCE=10V,IC=0.1mA
20
Min
75
40
6
10
100
100
Typ
Max
1/5
S-S1813
Rev.1.0,19-Oct-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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