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LSH70R1KGT

Description
Drain-source voltage (Vdss): 700V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 1.08Ω @ 2A, 10V Maximum power dissipation ( Ta=25°C): 50W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,11 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
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LSH70R1KGT Overview

Drain-source voltage (Vdss): 700V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 1.08Ω @ 2A, 10V Maximum power dissipation ( Ta=25°C): 50W Type: N-channel

LSH70R1KGT Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)700V
Continuous drain current (Id) at 25°C7A
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance1.08Ω @ 2A,10V
Maximum power dissipation (Ta=25°C)50W
typeN channel

LSH70R1KGT Preview

Download Datasheet
LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT
LonFET
Lonten N-channel 700V, 4A, 1.08Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
750V
1.08Ω
12A
13nC
The
on
Power MOSFET is fabricated using
device
has
extremely
low
advanced super junction technology.
resulting
resistance, making it especially suitable for
applications which require superior power
density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 13nC)
100% UIS tested
RoHS compliant
TO-251
TO-252
TO-220MF
D
Applications
G
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation
TO-220MF ( T
C
= 25° )
C
- Derate above 25°
C
P
D
Power Dissipation
TO-251/ TO-252( TC = 25° )
C
- Derate above 25°
C
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
50
0.4
50
-55 to +150
4
12
W
W/°
C
Ncm
°
C
A
A
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
700
4
2.5
12
±30
120
0.6
4
29
0.23
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°
C
Version 6.0
2018
1
www.lonten.cc
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