LNE08R055W3 datasheet, PDF - EEWORLD Datasheet

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LNE08R055W3: DescriptionDrain-source voltage (Vdss): 85V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 5.5mΩ @ 50A, 10V Maximum power consumption Dispersion (Ta=25°C): 189W(Tc) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size1MB，9 Pages; ManufacturerLonten Semiconductor Co., Ltd.; Websitehttp://www.lonten.cc; Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.

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LNE08R055W3 Overview

Drain-source voltage (Vdss): 85V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 5.5mΩ @ 50A, 10V Maximum power consumption Dispersion (Ta=25°C): 189W(Tc) Type: N-channel

LNE08R055W3 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	85V
Continuous drain current (Id) at 25°C	120A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	5.5mΩ @ 50A,10V
Maximum power dissipation (Ta=25°C)	189W(Tc)
type	N channel

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LNC08R055W3/LND08R055W3/LNE08R055W3

Lonten N-channel 85V, 120A, 5.5mΩ Power MOSFET

Description

These N-Channel enhancement mode power field

effect transistors are using split gate trench DMOS

technology. This advanced technology has been

especially tailored to minimize on-state resistance,

provide superior switching performance, and with

stand high energy pulse in the avalanche and

commutation mode. These devices are well suited

for high efficiency fast switching applications.

Product Summary

DSS

DS(on).max

@ V

=10V

85V

5.5mΩ

120A

Pin Configuration

Features



85V,120A,R

DS(ON).max

=5.5mΩ@VGS = 10V

Improved dv/dt capability

Fast switching

100% EAS Guaranteed

Green device available

TO-220FB

TO-220MF

Applications



TO-263-2L

N-Channel MOSFET

Motor Drives

UPS

DC-DC Converter

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Continuous drain current ( T

= 25° )

Continuous drain current ( T

= 100° )

Pulsed drain current

Gate-Source voltage

Avalanche energy

= 25° unless otherwise noted

Symbol

DSS

Value

120

Unit

GSS

480

±20

144

189

Power Dissipation ( T

= 25° ) TO-220FB/TO-263-2L

Power Dissipation ( T

= 25° ) TO-220MF

Storage Temperature Range

Operating Junction Temperature Range

STG

-55 to +150

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case TO-220FB/TO-263-2L

Thermal Resistance, Junction-to-Case TO-220MF

Thermal Resistance, Junction-to-Ambient TO-220FB/TO-263-2L

Thermal Resistance, Junction-to-Case TO-220MF

θJA

Symbol

θJC

Value

0.55

2.2

Unit

C/W

Version 1.2, 2016

www.lonten.cc

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