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KIA3415

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 800mV @ 250uA Drain-source on-resistance: 45mΩ @ 4A, 4.5V Maximum power dissipation (Ta =25°C): 1.4W Type: P channel P channel, -20V, -4.0A, 45mΩ@-4.5V, functions and pins are the same as AO3415
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size116KB,5 Pages
ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.
Websitehttp://www.kiaic.com/page/qiyejianjie.htm
Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.
Download Datasheet Parametric View All

KIA3415 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 800mV @ 250uA Drain-source on-resistance: 45mΩ @ 4A, 4.5V Maximum power dissipation (Ta =25°C): 1.4W Type: P channel P channel, -20V, -4.0A, 45mΩ@-4.5V, functions and pins are the same as AO3415

KIA3415 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C4A
Gate-source threshold voltage800mV @ 250uA
Drain-source on-resistance45mΩ @ 4A,4.5V
Maximum power dissipation (Ta=25°C)1.4W
typeP channel

KIA3415 Preview

Download Datasheet
KIA
SEMICONDUCTORS
-4.0A,-20V
P-CHANNEL MOSFET
3415
1.Description
The KIA3415 uses advanced trench technology to provide excellent R
DS(on)
,low gate charge
and operation with gate voltages as low as 1.8V.This device is suitable for use as a load switch or in PWM
applications.Standard Product KIA3415 is Pb-free(meets ROHS & Sony 259 specifications).KIA3415 is a
Green Product ordering option.KIA3415 is electrically identical.
2.
Features
n
n
n
n
n
V
DS
(V)=-20V
I
D
=-4.0A
R
DS(on)
<45mΩ(V
GS
=-4.5V,I
D
=-4.0A)
R
DS(on)
<54mΩ(V
GS
=-2.5V,I
D
=-4.0A)
R
DS(on)
<75mΩ(V
GS
=-1.8V,I
D
=-2.0A)
3.Symbol
Pin
1
2
3
Function
Gate
Source
Drain
1 of 5
Rev 1.1 JAN 2014
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