KIA
SEMICONDUCTORS
-4.0A,-20V
P-CHANNEL MOSFET
3415
1.Description
The KIA3415 uses advanced trench technology to provide excellent R
DS(on)
,low gate charge
and operation with gate voltages as low as 1.8V.This device is suitable for use as a load switch or in PWM
applications.Standard Product KIA3415 is Pb-free(meets ROHS & Sony 259 specifications).KIA3415 is a
Green Product ordering option.KIA3415 is electrically identical.
2.
Features
n
n
n
n
n
V
DS
(V)=-20V
I
D
=-4.0A
R
DS(on)
<45mΩ(V
GS
=-4.5V,I
D
=-4.0A)
R
DS(on)
<54mΩ(V
GS
=-2.5V,I
D
=-4.0A)
R
DS(on)
<75mΩ(V
GS
=-1.8V,I
D
=-2.0A)
3.Symbol
Pin
1
2
3
Function
Gate
Source
Drain
1 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
-4.0A,-20V
P-CHANNEL MOSFET
3415
6.
Electrical characteristics
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate- body leakage current
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Maximum body-diode continuous current
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(on)
R
DS(on)
gfs
V
SD
I
S
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
DS
=-10V,V
GS
=0V,
f=1MHz
V
DS
=0V,
V
GS
=0V,f=1MHz
V
DS
=-10V, V
GS
=-4.5V
I
D
=-4.0A
(T
A
=25°C,unless otherwise noted)
Test Conditions
Min Typ
Max
Units
V
GS
=0V,I
D
=-250μA
-20
-
-
V
-
-
V
DS
=-16V, V
GS
=0V
-50
nA
V
GS
=+8V, V
DS
=0V
-
-
+100
nA
V
DS
=V
GS
, I
D
=-250μA
-0.4 -0.55 -0.8
V
V
GS
=-4.5V, V
DS
=-5V
-25
-
-
A
V
GS
=-4.5V,I
D
=-4.0A
V
GS
=-2.5V,I
D
=-4.0A
V
GS
=-1.8V,I
D
=-2.0A
V
DS
=-5.0V, I
D
=-4A
V
GS
=0V,I
S
=-1A
-
-
-
40
50
70
16
-0.78
-
45
54
75
-
-1.28
-2.2
mΩ
S
V
A
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1450
205
160
6.5
17.2
1.3
4.5
9.5
17
94
35
31
13.8
-
-
-
-
-
-
-
-
-
-
-
-
-
Ω
nC
pF
V
DS
=-10V, R
L
=2.5Ω,,
R
G
=3Ω, V
GS
=-4.5V
ns
IF=-4A,dI/dt=100A/μs,
nS
nC
Note: A.The value of R
θJA
is measured with the device mounted on 1 in
2
FR-4 board with 2oz.Copper,in a
still air environment with T
A
=25℃.The value in any given application depends on the user’s specific
board design. The current rating is based on the t<10s thermal resistance rating.
B.Repetitive rating, pulse width limited by junction temperature.
C.The R
θJA
the sum of the thermal inpedence from junction to lead R
ΘJA
and lead to ambient.
D.The static characteristics in Figures 1 to 6,12,14 are obtained using 80μs pulses, duty cycle 0.5%
max.
E.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper,in a still
air environment with T
A
=25℃.The SOA curve provides a single pulse rating.
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Rev 1.1 JAN 2014