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G30N03A

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 30A (Tc) Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 9mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 25W (Tc) Type: N-channel N tube, 30V, 30A, turn on 1.5V, 6.3mΩ@10V, 9.2mΩ@4.5V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size882KB,6 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
Download Datasheet Parametric View All

G30N03A Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 30A (Tc) Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 9mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 25W (Tc) Type: N-channel N tube, 30V, 30A, turn on 1.5V, 6.3mΩ@10V, 9.2mΩ@4.5V

G30N03A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C30A(Tc)
Gate-source threshold voltage2.3V @ 250uA
Drain-source on-resistance9mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)25W(Tc)
typeN channel

G30N03A Preview

Download Datasheet
GOFORD
N-Channel
Enhancement Mode Power MOSFET
Description
The G30N03A uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
G30N03A
General Features
V
DS
=30V,I
D
=30A
R
DS(ON)
< 9m
@ V
GS
=10V
R
DS(ON)
< 13mΩ @ V
GS
=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
30
G
3
N0
A
Schematic diagram
Application
SMPS and general purpose applications
Hard switched and high frequency circuits
Uninterruptible power supply
3
G16P0
Marking and pin assignment
100% UIS TESTED!
DFN3X3-8L
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
30
±20
30
21
60
25
0.2
70
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
I
DM
P
D
T
J
,T
STG
www.goford.cn
TEL:0755-29961262
FAX:0755-29961466
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