CESDB5V0AT3 datasheet, PDF - EEWORLD Datasheet

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CESDB5V0AT3: DescriptionESD protection diode; CategoryDiscrete semiconductor; File Size3MB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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CESDB5V0AT3 Overview

ESD protection diode

Features

Product Name: ESD Protection Diode

Product model: CESDB5V0AT3

Product Description:

The CESDB5V0AT3 is designed to protect voltage sensitive

components from ESD. Excellent clamping capability, low leakage,

and fast response time provide best in class protection on designs that

are exposed to ESD. Because of its small size, it is suited for use in

cellular phones, MP3 players, digital cameras and many other portable

applications where board space is at a premium.

Product Features:

Reverse working (stand-off) Voltage: 5.0 V

Low Leakage

Response Time is Typically < 1 ns

ESD Rating of Class 3 (> 16 kV) Per Human Body Model

IEC61000?4?2 Level 4 ESD Protection

This is a Pb?Free Device

Product parameters:

Pd dissipated power: 150mW

Vrwm reverse working peak voltage: 5V

V(BR) Breakdown voltage: Min=5.8V Max=8.8V

IR maximum reverse leakage current: 1uA

IT test current: 1mA

VC clamping voltage: 15V

IPP reverse pulse current peak: 12.5A

C Capacitance: 26.5+pF

Package: SOT-.323

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Diodes

CESDB5V0AT3

ESD Protection Diode

SOT-323

DESCRIPTION

The CESDB5V0AT3 is designed to protect voltage sensitive

components from ESD. Excellent clamping capability, low leakage,

and fast response time provide best in class protection on designs that

are exposed to ESD. Because of its small size, it is suited for use in

cellular phones, MP3 players, digital cameras and many other portable

applications where board space is at a premium.

FEATURES

Reverse working (stand-off) Voltage: 5.0 V

Low Leakage

Response Time is Typically < 1 ns

ESD Rating of Class 3 (> 16 kV)

Per

Human Body Model

IEC61000−4−2 Level 4 ESD Protection

This is a Pb−Free Device

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

±30

400

Unit

℃/W

℃

IEC61000−4−2(ESD)

ESD

Voltage

Air

Contact

Per Human Body Model

Per Machine Model

stg

Total

Power Dissipation

on FR-5

Board

(Note 1)

Thermal Resistance Junction−to−Ambient

Lead Solder Temperature

−

Maximum (10 Second Duration)

Junction and Storage

Temperature Range

150

833

260

-55 ~ +150

Stresses exceeding

maximum ratings

may damage the device. Maximum

ratings

are stress ratings only.

Functional operation above the

recommended.

Operating

conditions

is not implied. Extended exposure to

stresses above the

recommended operating conditions

may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

A,Jun,2011

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