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Datasheet> All Categories > Discrete semiconductor> BCX70K
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BCX70K

Description
NPN transistor
CategoryDiscrete semiconductor   
File Size849KB，1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BCX70K Overview

NPN transistor

Features

Product Name: NPN Transistor


Product model: BCX70K



Product parameters:


Pcm (maximum dissipated power): 250mW


Ic (collector current): 200mA


BVcbo (collector-base breakdown voltage): 45V


BVceo (Collector-Emitter Breakdown Voltage): 45V


BVebo (emitter-base breakdown voltage): 5V


hFE (current gain): Min:380, Max:630


VCE (sat) saturation voltage drop: 0.55V


fT (transition frequency): 100MHz



Package: SOT-23

BCX70K Preview

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23
BCX70J,K
FEATURES
Low current
Low voltage
MARKING : BCX70J：AJ, BCX70K:AK
Plastic-Encapsulate Transistors
SOT-23
TRANSISTOR (NPN)
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
45
45
5
200
250
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE1
DC current gain
BCX70J
h
FE2
h
FE3
h
FE1
DC current gain
BCX70K
h
FE2
h
FE3
Collector-emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
BE
C
ob
NF
f
T
Test conditions
I
C
=10μA,I
E
=0
I
C
=2mA,I
B
=0
I
E
=1μA,I
C
=0
V
CE
=45V,V
BE
=0
V
CE
=5V,I
C
=10μA
V
CE
=5V,I
C
=2mA
V
CE
=1V,I
C
=50mA
V
CE
=5V,I
C
=10μA
V
CE
=5V,I
C
=2mA
V
CE
=1V,I
C
=50mA
I
C
= 10mA I
B
= 0.25 mA
I
C
= 50mA I
B
=1.25 mA
I
C
= 10mA I
B
=-0.25 mA
I
C
= 50mA I
B
= 1.25 mA
V
CE
=5V,I
C
=2mA
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=5V,I
C
=200μA,
f=1KHz,BW=200Hz,RS=2KΩ
V
CE
= 5 V, I
C
=10mA,f =100 MHz
100
250
30
250
90
100
380
100
0.05
0.1
0.6
0.7
0.55
1.7
6
0.35
0.55
0.85
1.05
0.75
V
V
V
V
V
pF
dB
MHz
630
460
Min
45
45
5
20
Typ
Max
Unit
V
V
V
nA
Base -emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Noise Figure
Gain-Bandwidth Product
A,May,2011

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