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2SC2222H_R1_00001

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2SC2222H_R1_00001 Overview

Power Bipolar Transistor,

2SC2222H_R1_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
Shell connectionCOLLECTOR
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1

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Download Datasheet
P2SC2222H
NPN General Purpose Switching Transistor
Voltage
Features
40V
Current
600mA
SOT-89
NPN epitaxial Silicon, Planar Design
Collector-emitter voltage VCE = 40V
Collector current = 600mA
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-89 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.002 ounces, 0.057grams
Marking: C2H
Pin Assignment: 1. Base
2. Collector
3. Emitter
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Junction to Ambient (Note1)
Operating Junction and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
TOT
R
θJA
T
J
,T
STG
LIMIT
o
UNITS
V
V
V
mA
mA
W
o
75
40
6
600
800
1.1
250
-55~150
C/ W
o
C
Note1: Transistor mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
October 27,2015-REV.01
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