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25P06

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 25A (Tc) Gate-source threshold voltage: 3.5V @ 250uA Drain-source on-resistance: 45mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 90W (Tc) Type: P channel P channel, -60V, -25A, 45mΩ@-10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,5 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
Download Datasheet Parametric View All

25P06 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 25A (Tc) Gate-source threshold voltage: 3.5V @ 250uA Drain-source on-resistance: 45mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 90W (Tc) Type: P channel P channel, -60V, -25A, 45mΩ@-10V

25P06 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C25A(Tc)
Gate-source threshold voltage3.5V @ 250uA
Drain-source on-resistance45mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)90W(Tc)
typeP channel

25P06 Preview

Download Datasheet
GOFORD
Description
The 25P06 uses advanced trench technology and design
to provide excellent R
DS(ON)
with low gate charge .This device is
well suited for high current load applications.
25P06
General Features
V
DSS
-60V
@ -4.5V (typ)
R
DS(ON)
39 m
I
D
-25A
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Application
High side switch for full bridge converter
DC/DC converter for LCD display
Marking and pin assignment
To-252
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
-60
±20
-25
-17.7
-60
90
0.72
300
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
I
DM
P
D
T
J
,T
STG
HTTP://www.gofordsemi.com
TEL:0755-29961262
FAX:0755-29961466
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