STGWA30HP65FB2
Datasheet
Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT
in a TO-247 long leads package
Features
•
•
•
•
•
•
•
C(2, TAB)
Maximum junction temperature : T
J
= 175 °C
Low V
CE(sat)
= 1.65 V(typ.) @ I
C
= 30 A
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive V
CE(sat)
temperature coefficient
Applications
G(1)
•
•
Welding
Power factor correction
Description
E(3)
NG1E3C2T
The newest IGBT 650 V HB2 series represents an evolution of the advanced
proprietary trench gate field-stop structure. The performance of the HB2 series is
optimized in terms of conduction, thanks to a better V
CE(sat)
behavior at low current
values, as well as in terms of reduced switching energy. A diode used for protection
purposes only is co-packaged in antiparallel with the IGBT. The result is a product
specifically designed to maximize efficiency for a wide range of fast applications.
Product status link
STGWA30HP65FB2
Product summary
Order code
Marking
Package
Packing
STGWA30HP65FB2
G30HP65FB2
TO-247 long leads
Tube
DS13149
-
Rev 1
-
November 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STGWA30HP65FB2
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
CES
I
C
I
CP
(1)(2)
V
GE
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Transient gate-emitter voltage (t
p
≤ 10 μs)
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total power dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Value
650
50
30
90
±20
±30
5
5
10
167
-55 to 150
-55 to 175
Unit
V
A
A
A
V
I
F
I
FP
(1)(2)
P
TOT
T
STG
T
J
A
A
W
°C
°C
1. Pulse width is limited by maximum junction temperature.
2. Defined by design, not subject to production test.
Table 2.
Thermal data
Symbol
R
thJC
R
thJA
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.9
5
50
°C/W
Unit
DS13149
-
Rev 1
page 2/15
STGWA30HP65FB2
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 3.
Static characteristics
Symbol
V
(BR)CES
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Test conditions
V
GE
= 0 V, I
C
= 1 mA
V
GE
= 15 V, I
C
= 30 A
V
CE(sat)
V
GE
= 15 V, I
C
= 30 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 30 A, T
J
= 175 °C
I
F
= 5 A
V
F
Forward on-voltage
I
F
= 5 A, T
J
= 125 °C
I
F
= 5 A, T
J
= 175 °C
V
GE(th)
I
CES
I
GES
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
V
CE
= V
GE
, I
C
= 1 mA
V
GE
= 0 V, V
CE
= 650 V
V
CE
= 0 V, V
GE
= ±20 V
5
Min.
650
1.65
1.85
2.0
2
1.85
1.75
6
7
25
±250
V
µA
nA
2.8
V
2.1
V
Typ.
Max.
Unit
V
Table 4.
Dynamic characteristics
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CC
= 520 V, I
C
= 30 A, V
GE
= 0 to 15 V
(see
Figure 27. Gate charge test circuit)
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
Test conditions
Min.
-
-
-
-
-
-
Typ.
1570
98
40
90
15.3
41.5
Max.
-
-
-
-
-
-
nC
pF
Unit
Table 5.
Switching characteristics (inductive load)
Symbol
t
d(off)
t
f
E
off
(1)
t
d(off)
t
f
E
off
(1)
Parameter
Turn-off delay time
Current fall time
Turn-off switching energy
Turn-off delay time
Current fall time
Turn-off switching energy
Test conditions
V
CC
= 400 V, I
C
= 30 A,
V
GE
= 15 V, R
G
= 6.8 Ω
(see
Figure 26. Test circuit for inductive
load switching)
V
CC
= 400 V, I
C
= 30 A,
V
GE
= 15 V, R
G
= 6.8 Ω, T
J
= 175 °C
(see
Figure 26. Test circuit for inductive
load switching)
Min.
-
-
-
-
-
-
Typ.
71
41
310
79
105
643
Max.
-
-
-
-
-
-
Unit
ns
ns
µJ
ns
ns
µJ
1. Including the tail of the collector current.
DS13149
-
Rev 1
page 3/15
STGWA30HP65FB2
Electrical characteristics
Table 6.
Diode switching characteristics (inductive load)
Symbol
t
rr
Q
rr
I
rrm
dI
rr
/dt
E
rr
t
rr
Q
rr
I
rrm
dI
rr
/dt
E
rr
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during t
b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during t
b
Reverse recovery energy
I
F
= 5 A, V
R
= 400 V,
V
GE
= 15 V, di/dt = 1000 A/µs,
T
J
= 175 °C
(see
Figure 29. Diode reverse recovery
waveform)
I
F
= 5 A, V
R
= 400 V,
V
GE
= 15 V, di/dt = 1000 A/µs
(see
Figure 29. Diode reverse recovery
waveform)
Test conditions
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
140
21
6.6
430
1.6
200
47.3
9.6
428
3.2
Max.
-
-
-
-
-
-
-
-
-
-
Unit
ns
nC
A
A/µs
µJ
ns
nC
A
A/µs
µJ
DS13149
-
Rev 1
page 4/15
STGWA30HP65FB2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Power dissipation vs case temperature
P
TOT
(W)
160
GADG111120191425PDT
Figure 2.
Collector current vs case temperature
I
C
(A)
50
40
V
GE
≥ 15 V
T
J
≤ 175 °C
GADG111120191426CCT
120
V
GE
≥ 15 V
T
J
≤ 175 °C
30
20
80
40
0
25
10
0
25
75
125
175
T
C
(°C)
75
125
175
T
C
(°C)
Figure 3.
Output characteristics (T
J
= 25 °C)
I
C
(A)
75
60
45
30
15
0
0
V
GE
= 7V
V
GE
= 15V
GADG111120191427OC25
Figure 4.
Output characteristics (T
J
= 175 °C)
I
C
(A)
75
60
V
GE
= 15V
GADG111120191428OC175
V
GE
= 13V
V
GE
= 11V
V
GE
= 9V
V
GE
= 13V
V
GE
= 11V
V
GE
= 9V
45
30
15
0
0
V
GE
= 7V
1
2
3
4
5
V
CE
(V)
1
2
3
4
5
V
CE
(V)
Figure 5.
V
CE(sat)
vs junction temperature
V
CE(sat)
(V)
2.8
2.4
2.0
1.6
1.2
0.8
-50
I
C
= 30 A
I
C
= 15 A
GADG111120191429VCET
Figure 6.
V
CE(sat)
vs collector current
V
CE(sat)
(V)
3.2
2.8
2.4
2.0
1.6
1.2
T
J
= -40°C
T
J
= 25°C
GADG111120191430VCEC
V
GE
= 15 V
I
C
= 60 A
T
J
= 175°C
0
50
100
150
T
J
(°C)
0.8
0
15
30
45
60
75
I
C
(A)
DS13149
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Rev 1
page 5/15
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