BSC072N04LD
MOSFET
OptiMOS
TM
-T2PowerTransistor,40V
Features
·DualN-channel,logiclevel
·FastswitchingMOSFETsforSMPS
·OptimizedtechnologyforSynchronousRectification
·Pb-freeplating;RoHScompliant
·100%Avalanchetested
·Halogen-freeaccordingtoIEC61249-2-21
·Superiorthermalresistance
ProductValidation
Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof
JEDEC47/20/22
8
PG-TDSON-8-4
7
1
6
5
2
3
4
1
2
8
3
4
7
6
5
D1 D1
D2 D2
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Value
40
7.2
20
Unit
V
mΩ
A
S1
G1
S2
G2
Type/OrderingCode
BSC072N04LD
Package
SSO8 dual (TDSON-8-4)
Marking
072N04LD
RelatedLinks
-
Final Data Sheet
1
Rev.2.0,2018-12-11
OptiMOS
TM
-T2PowerTransistor,40V
BSC072N04LD
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.2.0,2018-12-11
OptiMOS
TM
-T2PowerTransistor,40V
BSC072N04LD
1Maximumratings
atT
A
=25°C,unlessotherwisespecified,onetransistoractive
Table2Maximumratings
Parameter
Continuous drain current
Pulsed drain current
1)
Avalanche energy, single pulse
2)
Gate source voltage
Power dissipation
Operating and storage temperature
Symbol
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
Values
Min.
-
-
-
-16
-
-55
Typ.
-
-
-
-
-
-
Max.
20
80
87
16
65
175
Unit
A
A
mJ
V
W
°C
Note/TestCondition
V
GS
=10V,T
C
=25°C
T
A
=25°C
I
D
=10A,R
GS
=25Ω
-
T
C
=25°C
IEC climatic category; DIN IEC 68-1:
55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Device on PCB,
6 cm² cooling area
3)
Device on PCB,
minimal footprint
4)
Symbol
R
thJC
R
thJA
R
thJA
Values
Min.
-
-
-
Typ.
-
-
-
Max.
2.3
60
100
Unit
Note/TestCondition
°C/W -
°C/W -
°C/W -
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
Values
Min.
40
1.2
-
-
-
-
-
Typ.
-
1.7
0.1
10
-
6.5
8.0
Max.
-
2.2
1
100
100
7.2
9.2
Unit
V
V
µA
nA
mΩ
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=30µA
V
DS
=40V,V
GS
=0V,T
j
=25°C
V
DS
=40V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=17A
V
GS
=4.5V,I
D
=10A
1)
2)
See Diagram 3 for more detailed information
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4)
device mounted on a minimum pad (one layer, 70 µm thick)
Final Data Sheet
3
Rev.2.0,2018-12-11
OptiMOS
TM
-T2PowerTransistor,40V
BSC072N04LD
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
3070
680
36
9
4
50
25
Max.
3990
880
72
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=20V,f=1MHz
V
GS
=0V,V
DS
=20V,f=1MHz
V
GS
=0V,V
DS
=20V,f=1MHz
V
DD
=20V,V
GS
=10V,I
D
=20A,
R
G,ext
=11Ω
V
DD
=20V,V
GS
=10V,I
D
=20A,
R
G,ext
=11Ω
V
DD
=20V,V
GS
=10V,I
D
=20A,
R
G,ext
=11Ω
V
DD
=20V,V
GS
=10V,I
D
=20A,
R
G,ext
=11Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
1)
Gate plateau voltage
Symbol
Q
gs
Q
gd
Q
g
V
plateau
Values
Min.
-
-
-
-
Typ.
9
4.1
39
3.1
Max.
13
8.2
52
-
Unit
nC
nC
nC
V
Note/TestCondition
V
DD
=20V,I
D
=20A,V
GS
=0to10V
V
DD
=20V,I
D
=20A,V
GS
=0to10V
V
DD
=20V,I
D
=20A,V
GS
=0to10V
V
DD
=20V,I
D
=20A,V
GS
=0to10V
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.85
35
35
Max.
20
80
1.1
-
-
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=17A,T
j
=25°C
V
R
=15V,I
F
=9A,di
F
/dt=100A/µs
V
R
=15V,I
F
=9A,di
F
/dt=100A/µs
1)
2)
Defined by design. Not subject to production test.
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2018-12-11
OptiMOS
TM
-T2PowerTransistor,40V
BSC072N04LD
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
70
Diagram2:Draincurrent
80
60
70
silicon limit
50
60
50
P
tot
[W]
40
I
D
[A]
30
20
10
0
0
25
50
75
100
125
150
175
200
40
30
20
package limit
10
0
0
25
50
75
100
125
150
175
200
T
A
[°C]
P
tot
=f(T
A
),minimalfootprint
I
D
=f(T
A
);minimalfootprint
T
A
[°C]
Diagram3:Safeoperatingarea
10
2
1 µs
10 µs
10 ms
DC
10
1
1 ms
100 µs
Diagram4:Max.transientthermalimpedance
10
1
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
0
Z
thJC
[K/W]
10
-1
10
-1
-1
0
1
2
I
D
[A]
10
10
10
10
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
I
D
=f(V
DS
);T
C
=25°C;D=0;parameter:t
p
Z
thJC
=f(t
p
);parameter:D=t
p
/T
t
p
[s]
Final Data Sheet
5
Rev.2.0,2018-12-11
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