FFSP0665B

FFSP0665B Silicon Carbide (SiC) Schottky Diode uses a new technology to provide superior switching performance and higher reliability than silicon. No reverse recovery current, temperature-independent switching characteristics and excellent thermal properties make silicon carbide an ideal material choice for next-generation power semiconductors. System benefits include highest efficiency, faster operating frequency, higher power density, lower EMI, smaller system size and lower cost. Features: Maximum junction temperature 175°C High surge current capacity Positive temperature coefficient Easy paralleling No reverse recovery/no forward recovery These devices are lead-free, halogen-free/BFR-free Applications General purpose switching power supplies, solar inverters, UPS power switches circuit