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C3D08065E-TR PDF

C3D08065E-TR

Description
Diode Silicon Carbide Schottky 650 V 25.5A (DC) Surface Mount Type TO-252-2
CategoryDiscrete semiconductor    diode   
File Size1MB,6 Pages
ManufacturerWolfspeed (Cree)
Download Datasheet Parametric View All

C3D08065E-TR Overview

Wolfspeed SiC (silicon carbide) Schottky diodes offer significant improvements over standard Schottky barrier diodes. SiC diodes offer higher breakdown field strength and higher thermal conductivity, significantly reducing power losses at higher switching frequencies. SiC diodes are perfect for high-efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 voltage ratings • Zero reverse recovery current and forward recovery voltage • Temperature independent switching behavior • Extremely fast switching times with minimal losses • Positive temperature coefficient forward voltage • Devices can be paralleled without the need for Thermal Dissipation • Reduced heat sink requirements • Optimized for use in PFC boost diode applications

C3D08065E-TR Parametric

Parameter NameAttribute value
categoryDiscrete semiconductor;diode
MakerWolfspeed (Cree)
seriesZ-Rec®
PackageTape and Reel (TR)
technologySiC(Silicon Carbide)Schottky
Voltage - DC reverse (Vr) (maximum)650 V
Current - average rectification (Io)25.5A
Voltage at different If - Forward (Vf)1.8 V @ 8 A
speedNo recovery time > 500mA (Io)
Reverse recovery time (trr)0 ns
Current at different Vr - reverse leakage50 µA @ 650 V
Capacitance at different Vr, F395pF @ 0V,1MHz
Installation typesurface mount type
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Supplier device packagingTO-252-2
Operating Temperature - Junction-55°C ~ 175°C
Basic product numberC3D08065

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