VS-2EQH01HM3, VS-2EQH02HM3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 A FRED Pt
®
eSMP
®
Series
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• Low leakage current
• Meets MSL level 1, per
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
J-STD-020,
Top View
Bottom View
MicroSMP (DO-219AD)
Anode
Cathode
• For PFC, CRM snubber operation
LINKS TO ADDITIONAL RESOURCES
D
D
3
3
3D Models
TYPICAL APPLICATION
For use in high frequency, freewheeling, DC/DC converters,
PFC, and in snubber industrial and automotive applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
I
FSM
T
J
max.
Package
Circuit configuration
2A
100 V, 200 V
0.82 V
33 ns
30 A
175 °C
MicroSMP (DO-219AD)
Single
MECHANICAL DATA
Case:
MicroSMP (DO-219AD)
Molding compound meets UL 94 V-0 flammability rating
Terminals:
matte tin plated leads, solderable
J-STD-002, meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
per
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
VS-2EQH01HM3
VS-2EQH02HM3
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
M
= 137 °C
T
J
= 25 °C, 10 ms sine pulse
TEST CONDITIONS
VALUES
100
200
2
30
-55 to +175
A
°C
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
VS-2EQH01HM3
VS-2EQH02HM3
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 2 A
I
F
= 2 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
MIN.
100
200
-
-
-
-
-
0.96
0.82
-
-
6
1.05
0.84
1
25
-
μA
pF
TYP.
-
MAX.
-
V
UNITS
Revision: 28-Jan-2021
Document Number: 96564
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-2EQH01HM3, VS-2EQH02HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 2 A
dI
F
/dt = 200 A/μs
V
R
= 100 V
MIN.
-
-
-
-
-
-
-
-
TYP.
33
-
19
33
1.7
2.5
15
34
MAX.
-
23
-
-
-
-
-
-
A
nC
ns
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature
range
Thermal resistance, junction to mount
Thermal resistance, junction to ambient
Marking device
VS-2EQH01HM3
VS-2EQH02HM3
SYMBOL
T
J
, T
Stg
R
thJM (1)
R
thJA
Device mounted on FR4 PCB, 2 oz.
standard footprint
Case style MicroSMP (DO-219AD)
TEST CONDITIONS
MIN.
-55
-
-
TYP.
-
16
160
2H1
2H2
MAX.
175
20
-
°C/W
UNITS
°C
Note
(1)
Thermal resistance junction to mount follows JEDEC
®
51-14 transient dual interface test method (TDIM)
I
F
- Instantaneous Forward Current (A)
100
10
175 °C
I
R
- Reverse Current (μA)
150 °C
1
125 °C
10
T
J
= 175 °C
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= -40 °C
0.1
25 °C
0.01
0.1
0.2
0.7
1.2
1.7
2.2
2.7
0
25
50
75
100
125
150
175
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 28-Jan-2021
Document Number: 96564
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-2EQH01HM3, VS-2EQH02HM3
www.vishay.com
Vishay Semiconductors
100
C
T
- Junction Capacitance (pF)
10
1
0
50
100
150
200
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJM
- Thermal Impedance
Junction to Mount (°C/W)
10
1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.0001
0.001
0.01
0.1
1
0.1
0.00001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Transient Thermal Impedance, Junction to Mount
180
2.5
Allowable Mount Temperature (°C)
Average Power Loss (W)
170
160
DC
150
140
130
120
0
0.5
1
1.5
2
2.5
Square
wave (D = 0.50)
Rated V
R
applied
2
RMS limit
1.5
D = 0.01
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Mount Temperature
vs. Average Forward Current
Note
Formula used: T
M
= T
J
- (Pd + Pd
REV
) x R
thJM
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 28-Jan-2021
Document Number: 96564
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-2EQH01HM3, VS-2EQH02HM3
www.vishay.com
Vishay Semiconductors
50
45
40
35
125 °C
45
40
35
Q
rr
(nC)
30
t
rr
(ns)
30
25
20
15
25 °C
25
20
15
10
5
100
25 °C
125 °C
10
5
1000
100
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 28-Jan-2021
Document Number: 96564
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-2EQH01HM3, VS-2EQH02HM3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
2
2
E
3
Q
4
H
5
02
6
H
7
M3
8
Vishay Semiconductors product
Current rating (2 = 2 A)
Circuit configuration:
E = single diode
-
-
-
-
-
Q = MicroSMP package
Process type,
H = ultrafast recovery
Voltage code (02 = 200 V)
H = AEC-Q101 qualified
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-2EQH01HM3/H
VS-2EQH02HM3/H
PREFERRED PACKAGE CODE
H
H
MINIMUM ORDER QUANTITY
4500
4500
PACKAGING DESCRIPTION
7" diameter plastic tape and reel
7" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?96591
www.vishay.com/doc?96590
www.vishay.com/doc?88869
www.vishay.com/doc?96595
Revision: 28-Jan-2021
Document Number: 96564
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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