BSZ024N04LS6
MOSFET
OptiMOS
TM
6Power-Transistor,40V
Features
•Optimizedforsynchronousapplication
•Verylowon-resistanceR
DS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•175°Crated
PG-TSDSON-8FL
8
5
7
6
5
6
7
8
1
2
4
3
4
3
2
1
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
G
(0V..10V)
Q
G
(0V..4.5V)
Value
40
2.4
130
28
25
12.3
Unit
V
mΩ
*1: Internal body diode
Drain
Pin 5-8
Gate
Pin 4
*1
Source
Pin 1-3
A
nC
nC
nC
Type/OrderingCode
BSZ024N04LS6
Package
PG-TSDSON-8 FL
Marking
24N04L6
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2021-02-22
OptiMOS
TM
6Power-Transistor,40V
BSZ024N04LS6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.2,2021-02-22
OptiMOS
TM
6Power-Transistor,40V
BSZ024N04LS6
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-
-
-20
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
130
92
109
77
24
520
137
20
75
2.5
175
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=4.5V,T
C
=25°C
V
GS
=4.5V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
THJA
=60°C/W
2)
T
A
=25°C
I
D
=20A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
THJA
=60°C/W
2)
IEC climatic category; DIN IEC 68-1:
55/175/56
Continuous drain current
1)
I
D
A
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
mJ
V
W
°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm² cooling area
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
-
-
-
Max.
2
20
60
Unit
Note/TestCondition
°C/W -
°C/W -
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.2,2021-02-22
OptiMOS
TM
6Power-Transistor,40V
BSZ024N04LS6
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
40
1.3
-
-
-
-
-
-
-
Typ.
-
-
0.1
10
10
2.1
2.8
1.1
100
Max.
-
2.3
1
100
100
2.4
3.4
-
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=250µA
V
DS
=40V,V
GS
=0V,T
j
=25°C
V
DS
=40V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=20A
V
GS
=4.5V,I
D
=20A
-
|V
DS
|≥2|I
D
|R
DS(on)max
,I
D
=20A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
1800
570
19
7
6
17
3
Max.
-
-
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=20V,f=1MHz
V
GS
=0V,V
DS
=20V,f=1MHz
V
GS
=0V,V
DS
=20V,f=1MHz
V
DD
=20V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=20V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=20V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=20V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
1)
Switching charge
Gate charge total
1)
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
1)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
Q
g(sync)
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
-
Typ.
4.7
2.8
3.2
5.1
25
2.7
12.3
10.6
28
Max.
-
-
-
-
-
-
-
-
-
Unit
nC
nC
nC
nC
nC
V
nC
nC
nC
Note/TestCondition
V
DD
=20V,I
D
=20A,V
GS
=0to10V
V
DD
=20V,I
D
=20A,V
GS
=0to10V
V
DD
=20V,I
D
=20A,V
GS
=0to10V
V
DD
=20V,I
D
=20A,V
GS
=0to10V
V
DD
=20V,I
D
=20A,V
GS
=0to10V
V
DD
=20V,I
D
=20A,V
GS
=0to10V
V
DD
=20V,I
D
=20A,V
GS
=0to4.5V
V
DS
=0.1V,V
GS
=0to4.5V
V
DD
=20V,V
GS
=0V
1)
2)
Defined by design. Not subject to production test.
See
″Gate
charge waveforms″ for parameter definitio
Final Data Sheet
4
Rev.2.2,2021-02-22
OptiMOS
TM
6Power-Transistor,40V
BSZ024N04LS6
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.79
19
44
Max.
75
520
1
-
-
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=20A,T
j
=25°C
V
R
=20V,I
F
=20A,di
F
/dt=400A/µs
V
R
=20V,I
F
=20A,di
F
/dt=400A/µs
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.2,2021-02-22
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