0.35 micron RF BICMOS process

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0.35 micron RF BICMOS process [Copy link]

0.35 micron RF BICMOS process

Atmel and Motorola Semiconductor Division announced on February 4 that they have reached an agreement to build a second 0.35 micron RF BiCMOS (SiGe:C) and copper inductor process line at Atmel's 8-inch plant in Rousset, France, using advanced processes to produce advanced RF devices. This process can produce RF devices that support the next generation of mobile phones, WCDMA, or UMTS, wireless LAN and 802.11A markets, and achieve the data rate required by the next generation optical transmission standard OC-192. This production line will be put into production in the fourth quarter of this year. Motorola Semiconductor Division is also a supplier of RF BiCMOS and SiGe:C BiCMOS devices.