【Live FAQ】On Semiconductor's SiC and IGBT isolated gate driver solutions for solar energy storage and charging

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【Live FAQ】On Semiconductor's SiC and IGBT isolated gate driver solutions for solar energy storage and charging [Copy link]

Live Topic: ON Semiconductor's SiC and IGBT isolated gate driver solutions for solar energy storage and charging Q&A summary

Introduction: Electric vehicle charging piles are often combined with energy storage systems to better manage the power obtained from the grid. By using optimized isolated gate drivers, engineers can give full play to the advantages of power modules and discrete devices to provide reliable control for Mosfet.
This webinar will focus on ON Semiconductor's gate drivers and discuss how to optimize gate drive voltage design to increase speed, thereby minimizing switching losses and giving full play to the advantages of the device. It will also explain the problems that may be encountered when using gate drivers and the corresponding methods. Finally, a series of new products will be shared with you for engineers to choose.

Live lecturer:

Old Gao

Business Development Manager, Power Solutions Division, ON Semiconductor

Esther Zhou

Product Marketing Manager, Power Solutions Division, ON Semiconductor

FAQ Details

1. What are the characteristics of isolated gate drivers?

A: Depending on the load, the isolated gate driver needs to meet the primary and secondary side electrical isolation requirements, anti-EMI requirements, drive voltage, drive current and other requirements.

2. What is the frequency of the IGBT isolation gate driver and what is its performance?

A: The operating frequency of IGBT driver is generally lower than 50kHz.

3. What are the advantages and disadvantages of GaN technology compared to SiC technology, and what are the differences in their application areas?

A: GaN is generally used in low voltage, high frequency, and high current applications. SiC is used in high voltage, high frequency, high current, and high operating temperature applications.

4. What are the advantages and disadvantages of GaN technology compared to SiC technology, and what are the differences in their application areas?

A: The current operating voltage of GaN technology cannot reach the 1200V required for SiC applications.

5. At present, is it more appropriate to use IGBT or SiC for solar energy storage and charging? If it is a family unit, IGBT should have a more reasonable cost performance and post-maintenance, right?

A: Different solutions can be selected for different powers and different applications. For households, IGBT is currently the most cost-effective solution.

6. What are the advantages of isolated gate drivers compared to other drivers?

A: Improved performance, higher operating temperature, enhanced protection, lower Rg

7. What are the advantages of isolated gate drivers compared to other drivers?

A: It will be mentioned in detail in the upcoming video.

8. What are the advantages of IGBT?

A: IGBT currently has a cost advantage over SiC. For the same withstand voltage, the conduction loss of IGBT at high current can be made smaller.

9. How does the isolated gate driver achieve desaturation detection?

A: Through a Desat pin, detect the on-state voltage of MOS or IGBT when the Gate is open.

10. What are the highlights of ON Semiconductor's gate driver? Thank you

A: ON Semiconductor provides IGBT, Si MOS and SiC MOS.

11. What are the highlights of ON Semiconductor's gate driver? Thank you

A: Drivers for all these devices

12. How does the isolated gate driver achieve Miller clamping?

A: When the gate driver of the gate driver is turned off, the Gate voltage is pulled down to GND or VEE through the AMC pin to achieve Miller clamping to prevent false start-up

13. What is the minimum delay that ON Semiconductor’s isolated gate driver products can achieve?

A: The current product can reach 36ns

14. Where is ON Semiconductor's office in Beijing? I have an ON Semiconductor module and would like to ask for advice.

A: It is in Tsinghua Science Park. You can contact ON Semiconductor sales.

15. What protection functions does ON Semiconductor's IGBT isolated gate driver have?

A: Desat I & II，AMC, VEE, Fault report, reset等

16. Does the isolated gate driver have a built-in VCE saturation detection function?

A: All ONSemi drivers with Desat pins have VCE saturation detection.

17. What is the isolation degree of the IGBT isolated gate driver?

A: Galvanic Isolation with >5 kV withstand & 1400 V working voltage

18. Are the outputs in phase with the outputs?

A: NCD57100, NCD57080, NCD57090 series support differential input

19. From the perspective of efficiency, SIC can be designed to be more efficient than IGBT. When operating at high frequencies, SIC can achieve low losses and reduce the size of the filter. How much higher is the efficiency? Are there any actual measured comparison data?

A: The specific efficiency improvement depends on the application conditions. SiC can operate at higher temperatures (RDSon increases with temperature, which is smaller than Si MOS), higher frequencies, and reverse body charge recovery loss is much smaller than Si. Excluding the conduction loss, which depends on the selected RDSon parameters, the switching loss will be greatly improved.

20. Compared with other application fields such as motor drive, what are the main optimizations or differences of the photovoltaic storage and charging driver solution?

A: Optimized the operating temperature range, deseat

21. Compared with other application fields such as motor drive, what are the main optimizations or differences of the photovoltaic storage and charging driver solution?

A: Optimized the operating temperature range to 125C, supports destroy protection, Miller clamp, differential input, VEE protection

22. What is the minimum power supply voltage?

A: The power supply voltage of the driver depends on the UVLO1 and UVLO2 of the corresponding device. UVLO1 is the power supply of the primary PWM signal input, and UVLO2 is the power supply threshold of the MOS or IGBT side connected to the secondary driver.

23. What is the maximum switching frequency of SIC MOSFET?

A: More than 1MHz

24. What kind of isolation method does ON Semiconductor driver use?

A: ON Semiconductor drivers provide mainstream isolation methods, including optical isolation, electromagnetic isolation, and capacitive isolation technology.

25. Can SIC MOSFET replace IGBT in high-power drives?

A: In high-power drivers, it depends on whether the switching loss is greater or the conduction loss is greater, as well as the consideration of cost and efficiency requirements. Generally, it is a trend to use SiC in high-power drivers.

26. Can the gate driver and IGBT of SIC MOSFET be replaced?

A: They cannot be replaced. The UVLO voltages of the two are different, and the driving speed requirements for the gate driver are different. SiC requires a shorter driving delay.

27. When selecting a gate drive chip for Sic mosfet, what is the peak drive current generally required?

A: Currently it is 4~6A. In the future, as the driving power requirements and driving frequency increase, the current will reach 15A.

28. Is the isolation solution optical isolation or magnetic isolation?

A: ONSemi's driver isolation solutions include optical isolation products and magnetic isolation products.

29. Is ON Semiconductor's gate isolation driver chip mainly capacitive isolation or magnetic isolation? What is the withstand voltage?

A: Mainly magnetic isolation technology

30. Is ON Semiconductor's silicon carbide SiC MOSFET gate driver mainly single-channel?

A: There are single channel and dual channel products.

31. Should magnetic coupling technology pay attention to the temperature requirements of the production process and application environment?

A: Supports the ambient temperature range within the specification

32. What industries and fields are the products suitable for?

A: The product is suitable for charging piles, energy storage, automotive electric drive, industrial automation, electricity, etc.

33. In solar storage and charging applications, how to solve the electromagnetic interference and noise problems that may be encountered in SiC and IGBT isolated gate driver solutions?

A: Differential input, high CMTI gate driver, driver with active Miller clamp or negative voltage drive, etc.

34. Does an isolated driver have a time advantage over a discrete driver in controlling signal delay?

A: Yes, ON Semiconductor’s magnetic isolator NCD57000 can provide 15ns

35. Can SiC devices completely replace SI MOSFET at present?

A: SiC is suitable for high voltage fields (650V, 800V, 1200V), and Si MOS still has cost advantages in medium and low voltage.

36. Hello, can the negative pressure be turned off? Or is there always output?

A: NCD51xxx

37. Hello, can the negative pressure be turned off? Or is there always output?

A: Series can provide negative pressure shutoff

38. Why does solar storage and charging need an isolated driving solution?

A: Solar storage and charging requires isolation of the low-voltage and high-voltage circuits to prevent EMI and high voltage from damaging the low-voltage circuits, so isolation is required in the driving solution.

39. What are the product categories? Where can I get the catalog?

A: Please refer to the ON Semiconductor official website or the selection table in this material.

40. In solar storage and charging applications, what are the advantages and characteristics of isolated gate driver solutions for SiC and IGBT compared to traditional driver solutions?

A: Higher operating temperature range, higher carrier frequency 1Ghz

41. In solar-storage-charging applications, what are the advantages and features of isolated gate driver solutions for SiC and IGBT compared to traditional driver solutions?

A: Magnetic isolation supports higher carrier frequencies above 1GHZ, better EMI performance, supports Miller clamping, negative pressure shutdown, VEE protection, deseat

42. The power components in the energy storage industry generally use IGBT modules. Does ON Semiconductor have any design solutions in this regard?

A: ON Semiconductor provides IGBT modules with drivers.

43. Does SIC MOSFET need to use negative voltage shutdown to prevent tailing like IGBT?

A: Yes, according to the recommendations of different SiC suppliers, the negative voltage can be set between -2V and -5V.

44. What application fields is FOD8342 suitable for?

A: Suitable for energy storage, charging piles, power facilities and other applications

45. What are the unique innovations of isolation expansion?

A: According to the application requirements for the driver, more features and higher driving performance and noise resistance are provided.

46. Does ON Semiconductor have silicon carbide modules with integrated NTC to replace IGBT modules?

A: ON Semiconductor provides relevant products. Please contact ON Semiconductor's agent or sales office for more information about related products.

47. What series of automotive-grade isolated driver ICs does ON Semiconductor have?

A: NCV57XXX series are automotive grade products, including 2A-15A products

48. Does the SIC drive require negative pressure? Is drive protection required?

A: SiC also needs negative pressure, which can improve Eoff and prevent accidental start-up in the lower tube drive. Driver protection: Desat can be used for short circuit protection

49. Is the gate driver suitable for SIC from any manufacturer?

A: Applicable to most manufacturers' SiC, depending on the application and product requirements

50. Are there any reference circuits available for guidance?

A: The ON Semiconductor website provides reference designs for various applications, which can be browsed according to the solution.

51. What is your company's current drive solution, optocoupler isolation or transformer isolation?

A: There are both magnetic isolation and optical isolation products in the drive solution.

52. What are the differences between gate drivers for solar storage and other types of charging? Thank you

A: Solar storage and charging mainly use IGBT on the boost side, with IGBT-specific gate drive. In DCDC measurement, SiC or IGBT will be selected according to different battery voltages and conversion powers, so the corresponding optimized gate drive is selected.

53. How to make the ringing below the threshold voltage to prevent spurious turn-on?

A: By adjusting Rg through the gate drive of the split output, a snubber consisting of Rg and Cgs is formed to reduce the intensity of the ringing. Or some components are introduced on the load side to reduce the load inductive crosstalk.

54. Is SiC used in high voltage and high power fields, while GnA is used in low voltage fields?

A: Both have advantages in switching losses at high frequencies, but GaN is currently more suitable for low voltage applications.

55. How many packages does ON Semiconductor’s isolated gate driver provide?

A: SOIC-8, SOIC-16和SOIC-14

56. Can a single high-voltage isolation driver chip be used to drive two parallel silicon carbides?

A: It is recommended to use Buffer BJT to improve driving capability.

57. What are the advantages and disadvantages of multi-level isolation?

A: Multi-level isolation improves reliability, but will degrade latency and response performance.

58. What is the current supply situation of ON Semiconductor's gate drivers? How many weeks is the delivery cycle?

A: The standard delivery time is 12-16w

59. Does ON Semiconductor have automotive-grade gate drivers? If so, what series or models are they?

A: Yes, it is NCV57xxx

60. Does ON Semiconductor have automotive-grade gate drivers? If so, what series or models are they?

A: And NCV51XXX series

61. When using a gate driver: 1. Since the resistance value of the gate driver needs to match the gate resistance, otherwise the circuit performance may be unstable or damaged, how to solve the gate resistance matching problem? 2. If the driving capability of the gate driver is insufficient, the circuit may not work properly. How does your product deal with the problem of insufficient driving capability? 3. Power supply noise may interfere with the output of the gate driver and affect the circuit performance. What is unique about your product in dealing with power supply noise interference?

A: 1. Use split output to separate pull-up and pull-down, and finely adjust the gate resistance. 2. To deal with insufficient driving capability, you can use our high driving current driver, or use buffer BJT

62. When using a gate driver: 1. Since the resistance value of the gate driver needs to match the gate resistance, otherwise the circuit performance may be unstable or damaged, how to solve the gate resistance matching problem? 2. If the driving capability of the gate driver is insufficient, the circuit may not work properly. How does your product deal with the problem of insufficient driving capability? 3. Power supply noise may interfere with the output of the gate driver and affect the circuit performance. What is unique about your product in dealing with power supply noise interference?

A: It is recommended to use LDO for PSRR filtering on the power supply side to reduce power supply noise.

63. What are the general methods to reduce switching losses?

A: Optimize the switching curve, reduce the time of voltage and current overlap, use fast recovery diodes, and reduce the power loss of body charge during reverse recovery.

64. What certifications have ON Semiconductor’s gate drivers passed?

A: According to the product, there are UL1577 Recognized: File No. E509109, Vol. 1 and ASIL B

65. How to solve EMI/EMC problems in SIC and IGBT isolated gate driver applications?

A: Using magnetic isolation technology can improve EMI resistance

66. If the isolated driver needs to be further amplified, what is the best way to do it?

A: You can add a buffer BJT between the isolation driver and the gate to improve the driving capability and meet the driving frequency requirements.

67. What are the main characteristic indicators required for product selection?

A: You can focus on current driving capability, CMTI, Isolation Voltage, Delay Distortion (tpdoff-tpdon), Operating Temp, and different protection function requirements (Deseat, Miller clamp, negative voltage shutdown, VEE protection, differential input)

68. In the case of higher carrier frequency, will the corresponding output interference and harmonics be higher?

A: As the frequency increases, the rise and fall time is generally required to be shorter. Under the condition that other conditions remain unchanged, the output interference will become larger, and corresponding optimization and device coordination are required to ensure normal operation.

69. Is there a product selection manual or introduction?

A: For detailed selection manual, please contact sales.