GaN Amplifiers - Gallium Nitride Technology

石榴姐

GaN Amplifiers - Gallium Nitride Technology [Copy link]

Gallium Nitride (GaN) technology is a relatively new semiconductor technology used primarily in markets such as defense, aerospace, telecommunications infrastructure, and satellite communications.

As technology develops, the RF microwave field has begun to shift from LDMOS power amplifiers to GaN-based solutions with lower operating temperatures, smaller size, and higher power. GaN technology overcomes the frequency limitations of LDMOS (usually limited to below 3-4 GHz) and extends frequency capabilities to 50 GHz and above. Compared with LDMOS, the following are some of the main advantages of GaN-on-SiC (SiC) technology for base stations:

1. Smaller arrays

Because GaN on SiC has higher power output and superior heat dissipation compared to LDMOS, wireless network operators can use smaller arrays to achieve the same output power. The array size of GaN on SiC is 20% smaller than that of LDMOS.

2. Reliability

GaN can operate reliably even at high temperatures. This is critical for 5G base stations as these systems begin to move from air-conditioned rooms at the bottom of wireless towers to the top of towers. GaN on SiC provides high reliability even in the harsh tower-top environment.

3. Better heat dissipation:

GaN on SiC has higher thermal conductivity than LDMOS, so it can dissipate heat more efficiently, resulting in a cooler operating system.

4. Higher operating frequency

Unlike LDMOS, GaN on SiC can operate in the sub-6 GHz and millimeter wave (mmWave) frequency ranges used by 5G while increasing efficiency by 10% to 15%.

5.Lighter weight:

Weight is an important factor in base station applications and a key reason why smaller form factors are so important. The higher efficiency of GaN allows for the use of smaller heat sinks, reducing the size and weight of the overall system.

KeyLink's complete line of GaN amplifiers deliver superior performance. Our GaN RF power amplifiers range from 2 to 200 Watts of output power and feature a microprocessor-based design that includes an adaptive bias algorithm to optimize efficiency and output power across the frequency band under varying load conditions.

GaN power amplifier design features:

* Higher breakdown voltage 60 to 80 VBRDSS (100-150 volts)

* Higher power density

* Excellent thermal conductivity

* Example: LDMOS - 12W/sq. mm dissipation vs. GaN - 70W/sq. mm dissipation

* Higher junction temperature > 200°C (+225°C to 250°C)

* Higher saturated electron drift velocity (higher current carrying capability)

* Lower inherent capacitance, providing higher input/output device impedance, thus achieving broadband matching

* GaN provides high gain and high efficiency (50% to 60% in narrow band)

* Excellent noise and linear power added efficiency (PAE)

KeyLink's broadband GaN RF power amplifiers are multi-octave high power amplifiers operating between 1MHz and 18GHz, providing a wide dynamic range from 2W to 200W typical saturated power. The use of gallium nitride (GaN) and chip and wire technology in the manufacturing process ensures that the module has state-of-the-art power performance and excellent power-to-volume ratio. These GaN RF power amplifiers are ideal for interference, EMC, test and measurement applications.