Silicon carbide is different from traditional silicon in terms of material and process properties. Quality and reliability assurance is the primary issue that all manufacturers need to face. Infineon uses the latest technology and has finally explored a set of long-term and strategically advantageous technology routes through nearly 30 years of research and development and practice. In 2021, it launched a white paper on silicon carbide reliability research, which comprehensively sorted out the reliability issues of SiC MOSFET for customers.
Emerging technologies will inevitably require more exploration in terms of application. The ability to apply silicon carbide technology requires breaking away from traditional experience and thinking derived from the use of silicon devices and having more thinking and practice. While providing technical services to leading customers and leading designs in mature industries, Infineon is also actively participating in early pre-research projects in emerging industries and is committed to expanding the application of silicon carbide.
Product List (Click to View)
IMZA120R007M1H
1200V 7mΩ CoolSiC trench silicon carbide MOSFET single tube in TO247-4 package
IMW120R014M1H
1200V 14mΩ CoolSiC trench silicon carbide MOSFET single tube in TO247-3 package
IMZA120R020M1H
1200V 20mΩ CoolSiC trench silicon carbide MOSFET single tube in TO247-4 package
F3L8MR12W2M1HP_B11
3-level 1200 V CoolSiC MOSFET Easy module
FS55MR12W1M1H_B11
SixPACK 1200 V CoolSiC MOSFET Easy three-phase bridge module
FF2MR12W3M1H_B11
Half-Bridge 1200 V CoolSiC MOSFET Easy Module
Application Encyclopedia (Click to View)
Uninterruptible Power Supply (UPS)
Battery Formation
Electric vehicle fast charging
Motor Control and Drive
Solar System Solutions
Energy Storage System
Servo motor drive and control
Traction
Commercial, construction and agricultural vehicles (CAV)
Complete information (click to view)
White Paper: How Infineon controls and ensures the reliability of SiC-based power semiconductor devicesWhite
Paper: The impact of threshold voltage hysteresis on the switching characteristics of SiC MOSFETCoolSiC
MOSFET with excellent stabilityM1H
Easy-PressFIT module assembly instructions
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