Infineon launches next-generation silicon carbide technology, improving charging performance by 20%

Infineon Technologies' latest CoolSiC?MOSFET second-generation products have attracted widespread attention in the field of silicon carbide MOSFET technology. Compared with the previous generation of products, the new products have improved key performance such as energy storage and charging by 20%, while maintaining the same quality and reliability. This breakthrough technological advancement not only improves energy efficiency, but also helps promote the decarbonization process.

CoolSiCMOSFET second-generation technology uses the unique performance advantages of silicon carbide to reduce energy loss and achieve higher power conversion efficiency. Therefore, it is suitable for various power semiconductor applications such as solar power generation, energy storage, DC electric vehicle charging, motor drive and industrial power supply. The use of CoolSiC G2 in electric vehicle DC fast chargers can reduce power losses by up to 10% compared to the previous generation, thereby increasing charging capacity without increasing the size. The use of CoolSiC G2 devices in traction inverters can increase the driving range of electric vehicles. In the field of renewable energy, the use of CoolSiC G2 in solar inverters can reduce the size while maintaining high power output, thereby reducing the cost per watt.

Infineon's leading CoolSiC MOSFET trench technology has enabled high-performance CoolSiC G2 solutions, which provide higher efficiency and reliability than existing SiC MOSFET technologies through optimized design. The CoolSiC G2-based design combined with the award-winning .XT packaging technology provides higher thermal conductivity, better assembly management and higher performance. Infineon supplies silicon, silicon carbide and gallium nitride, meeting the expectations and needs of designers through design flexibility and advanced application expertise. Innovative semiconductors based on wide bandgap materials such as silicon carbide and gallium nitride promote decarbonization by enabling efficient use of energy.

The CoolSiC?MOSFET second generation product launched by Infineon Technologies is of great significance in the field of silicon carbide MOSFET technology and is expected to play an important role in improving energy efficiency and decarbonization. With the continuous development and application of this technology, it is believed that it will bring more innovations and breakthroughs to power semiconductor applications in various fields.