Qorvo recently announced that it has made it easier to develop 5G base stations operating in band n258 (24.25 to 27.5 GHz) with its new gallium arsenide (GaAs) front-end module (FEM), the QPF4010. The new QPF4010 FEM supports the deployment of 5G millimeter wave (mmWave) base stations by reducing the number of required base station antenna array elements by up to 50% and providing a compact package size for smaller system configurations.
Let’s take a closer look at QPF4010.
The QPF4010 integrates a power amplifier, power detector, switch and low noise amplifier in a compact 4mm x 4mm package. It is based on Qorvo's 90nm GaAs technology and provides excellent noise figure, as well as higher output power and gain than other semiconductor processes such as silicon germanium (SiGe) or silicon-on-insulator (SOI).
If you want to know more about the QPF4010, you can click on " Qorvo accelerates 5G network deployment in the n258 frequency band with compact 5G antenna technology " to learn more. I hope it will be of great benefit to your new product development.