Let’s talk about the advantages of GaN in the RF field

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Let’s talk about the advantages of GaN in the RF field [Copy link]

Gallium nitride is becoming more and more popular in the field of radio frequency, and its role is becoming more and more important, mainly because of its advantages in the field of radio frequency. Let's take a closer look:

Gallium nitride is a binary III/V group direct bandgap semiconductor crystal and is the most commonly used material for general lighting LEDs and Blu-ray players. In addition, gallium nitride is also used in radio frequency amplifiers and power electronic devices. Gallium nitride is a very hard material; the chemical bonds of its atoms are highly ionized gallium nitride chemical bonds, which produce an energy gap of 3.4 electron volts.

In semiconductor physics, "energy gap" refers to the energy required to free electrons from atomic nuclei and move freely within a solid. Energy gap is an important material parameter that ultimately determines the energy of free electrons and electric fields that a solid can withstand. The energy gap of gallium nitride is 3.4 electron volts, which is a relatively large number. This is why gallium nitride is called a "large energy gap semiconductor."

After introducing the chemical structure of gallium nitride, let’s take a look at why gallium nitride performs better than other semiconductor materials.

GaN on SiC stands out in RF applications for the following reasons:

1. High breakdown electric field:

Because GaN has a large energy gap, GaN materials also have a high breakdown electric field, so GaN devices can operate at much higher voltages than other semiconductor devices. When subjected to a high enough electric field, electrons in semiconductors can gain enough kinetic energy and break away from chemical bonds (a process called "impact ionization" or "voltage breakdown"). If impact ionization is not controlled, it can cause device performance degradation. Because GaN can operate at higher voltages, it can be used in higher power applications.

2. High saturation speed:

GaN's electrons have a high saturation velocity (the speed of electrons under very high electric fields). When combined with the large charge capability, this means that GaN devices are able to deliver much higher current densities.

RF power output is the product of voltage and current swing, so the higher the voltage and the greater the current density, the more RF power can be produced in a practically sized transistor. In simple terms, GaN devices produce much higher power density.

3. Outstanding thermal properties:

GaN on SiC exhibits unusual thermal properties, primarily due to SiC's high thermal conductivity. Specifically, this means that GaN on SiC devices will not get as hot as GaAs or Si devices at the same power. The cooler the device, the more reliable it is.

These advantages are just summarized from the " GaN Advantages in the RF Field ". What do you think? What other advantages does GaN have? Welcome to share and discuss.

alan000345

gk18965 posted on 2019-10-23 16:32 It makes sense, I learned a lot

Thanks