Devices | Class | introduce | Datasheet |
---|---|---|---|
1N5819HW | Schottky diode | Download | |
AO3400 | Discrete semiconductor;MOS (field effect tube) | Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 5.8A Gate-source threshold voltage: 1.4V @ 250uA Drain-source on-resistance: 32mΩ @ 5.8A, 10V Maximum power dissipation (Ta=25°C): 1.4W Type: N-channel | Download |
S8050 | Discrete semiconductor;triode | Transistor type: NPN Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 25V Rated power: 225mW NPN | Download |
SSAJ120100 | accessories;Toggle switch | Rated voltage DC: 5V Contact rated current: 10mA @ 5VDC Switching function: On-On Circuit structure: SPDT Rated voltage AC: - | Download |
PTF-V-T-R | accessories;Light touch switch | Download |
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