The second phase of Hantian Tiancheng Silicon Carbide Industrial Park project, which was once invested by Huawei Hubble, has been capped

 According to the Xiamen Torch High-tech Zone on May 20, the main part of the second phase of the Hantian Tiancheng Silicon Carbide Industrial Park project was capped recently. The total investment of the project is 630 million yuan, covering an area of ​​29,002.015 square meters. The first phase of the project has been completed and put into production, with a construction area of ​​18,502.64 square meters, and the second phase is planned to have a construction area of ​​24,133.03 square meters. The project plans to build a 6-inch SiC epitaxial wafer production line project, and the annual output value is expected to be 3 billion yuan after completion and production.　

The Hantian Tiancheng Silicon Carbide Industrial Park Project is a new project settled in the Tongxiang High-tech Industrial Base in 2018.

Hantian Tiancheng is a Sino-US joint venture high-tech enterprise integrating R&D, production and sales of silicon carbide semiconductor epitaxial wafers, located in the Xiamen Torch High-tech Industrial Development Zone Entrepreneurship Park. Hantian Tiancheng has become the first company in China and the fourth in the world that can produce and sell 6-inch silicon carbide epitaxial wafers. It is also the first manufacturer in China to provide industrialized 3-inch, 4-inch and 6-inch silicon carbide semiconductor epitaxial wafers.

In addition, in 2020, Hantian Tiancheng received investment from Huawei Haobo.