Can it become the next hot spot? my country's fourth-generation semiconductor layout is beginning to emerge

As the market's requirements for semiconductor performance continue to increase, coupled with the continuous introduction of various favorable policies, new compound materials such as third-generation semiconductors have begun to emerge with their performance advantages, and third-generation semiconductors have ushered in an explosive trend. At this time when the third-generation semiconductors are attracting everyone's attention, the fourth-generation semiconductors are gradually coming into our sight.

What is the fourth generation semiconductor?

The fourth generation of semiconductors refers to semiconductor materials represented by gallium oxide (Ga2O3) and antimonide. Compared with other semiconductor materials, the fourth generation of semiconductor materials has the advantages of smaller size, lower energy consumption, and stronger functions. They can be better used in optoelectronic devices and power electronic devices under harsh environmental conditions.

Among them, antimonide semiconductors have irreplaceable unique advantages in developing the next generation of small-volume, light-weight, low-power, low-cost devices and their extremely demanding applications.

Generally speaking, semiconductor materials are electronic materials used to make semiconductor devices and integrated circuits, and are the foundation of the semiconductor industry. So far, semiconductor materials are mainly divided into: first-generation semiconductors based on group IV silicon Si and germanium Ge elements; second-generation semiconductors based on group III-V gallium arsenide and indium phosphide; and third-generation semiconductors based on group III-V gallium nitride and group IV silicon carbide.

For the fourth-generation semiconductor materials, the main material systems that currently have the potential to become the fourth-generation semiconductor technology mainly include: narrow-bandgap gallium antimonide and indium arsenide compound semiconductors; ultra-wide-bandgap oxide materials; and other types of low-dimensional materials such as carbon-based nanomaterials, two-dimensional atomic crystal materials, etc.

Background of the development of the fourth generation semiconductor

With the development of quantum information, artificial intelligence and other high-tech technologies, new semiconductor systems and multifunctional device technologies such as microelectronics are also being updated and iterated. Although the first three generations of semiconductor technology have continued to develop, they have gradually shown problems of being unable to meet new demands, especially the difficulty in meeting the requirements of high performance and low cost at the same time.

In this context, people began to turn their attention to the fourth-generation semiconductors, which have advantages such as small size and low power consumption.

As early as 2011, Japan's Tamura Manufacturing Co., Ltd. developed GaN-based LED components using gallium oxide substrates. However, in September this year, according to Japanese media reports, the Ministry of Economy, Trade and Industry (METI) of Japan is preparing to provide financial support to private enterprises and universities committed to developing a new generation of low-energy semiconductor materials "gallium oxide". METI will set aside about US$20.3 million for next year, and the investment is expected to exceed US$85.6 million in the next five years.

Although my country started late, research on fourth-generation semiconductor materials such as gallium oxide is also progressing.

my country's research in the fourth-generation semiconductor field is still advancing

Since 2005, good news has been coming from antimonide research in my country. The Institute of Semiconductors of the Chinese Academy of Sciences, Shanghai Institute of Technical Physics and other research institutions have taken the lead in breaking through the GaSb-based InAs/GaSb superlattice focal plane technology, and the performance has basically maintained the same level as the international development level.

At present, the gallium antimonide substrates developed by the Institute of Semiconductors of the Chinese Academy of Sciences have achieved mass production of 2-3 inch diameter substrates, with the maximum size reaching 4 inches. At the same time, it has achieved the development of 2-3 inch diameter, 500-1000 pieces/year of antimonide multifunctional low-dimensional material epitaxial wafers, and developed 4-inch molecular beam epitaxy technology.

In terms of gallium oxide single crystals, in 2017, the team of Associate Professor Tang Huili and Professor Xu Jun from the School of Physical Science and Engineering of Tongji University successfully prepared 2-inch high-quality β-Ga2O3 single crystals using the guided-mode method with independent intellectual property rights. The researchers established a reasonable thermal field temperature distribution, combined with the oxidation atmosphere and air pressure control during the growth process, effectively inhibited the decomposition and volatilization of Ga2O3; at the same time, they solved the problems of polycrystalline growth, twin crystals, mosaic structure, cracking and other defects. This research result will strongly promote the development of gallium oxide-based power electronic devices and detection devices in my country.

In addition to technical research, companies and projects related to my country's fourth-generation semiconductors are also being established one after another.

Gallium Technology, a high-tech company specializing in the development of fourth-generation semiconductor gallium oxide materials

In 2017, Beijing GaZu Technology Co., Ltd. (hereinafter referred to as "GaiZu Technology") was officially established.

According to the news from Shunyi Innovation Demonstration Zone, Gallium Family Technology is the first high-tech company in China and the second in the world that specializes in the development and application industrialization of fourth-generation (ultra-wide bandgap) semiconductor gallium oxide materials. It is committed to the research and development and production of high-quality single crystals and epitaxial substrates based on ultra-wide bandgap semiconductor material gallium oxide, high-sensitivity solar-blind ultraviolet detection devices, high-frequency and high-power devices, etc.

It is reported that Gallium Technology has a 2-inch gallium oxide single crystal growth production line, a 2-inch gallium oxide epitaxial growth production line, and a crystal processing production line. It also has the ability to carry out research and development, testing, and device development for 4-6 inch gallium oxide single crystal growth.

Limei Technology's annual production of 2 tons of gallium antimonide crystals and 130,000 gallium antimonide wafers

The project is located in the Kazuo Economic Development Zone, Chaoyang, Liaoning Province, with a total investment of 140 million yuan, of which 8.755 million yuan is invested in environmental protection. The project covers an area of ​​67.22 acres. After completion, the project will produce 1,900 kilograms of gallium antimonide crystals and 130,000 pieces (equivalent to 2 inches) of gallium antimonide wafers annually.

Sub-project of the Fourth Generation Semiconductor Antimonide Industrial Base of the Chinese Academy of Sciences

On March 4, Sun Shaobo, member of the Standing Committee of Fushan District Committee and deputy district mayor of Yantai High-tech Zone, Shandong Province, held a video conference to discuss sub-projects of the Fourth Generation Semiconductor Antimonide Industrial Base of the Chinese Academy of Sciences in Fushan Park of the High-tech Zone.

According to official news from the Fushan Park in the High-tech Zone, Sun Shaobo said that the sub-projects of the Fourth Generation Semiconductor Antimonide Industrial Base of the Chinese Academy of Sciences are technologically advanced and internationally leading, with a relatively mature level of industrialization, which will play an important role in promoting the development of the electronic information industry in Fushan District. He hopes that the project party will further refine the project implementation plan, and the park should also effectively strengthen communication and exchanges with company leaders, actively discuss the details of the project's settlement, strive for substantial progress in cooperation, and promote the early implementation of the project.

Peking University Shanxi Carbon-based Thin Film Electronics Research Institute

In September, Shanxi Province and Peking University signed the "Strategic Cooperation Agreement on Scientific and Technological Innovation between the People's Government of Shanxi Province and Peking University". According to the agreement, the Shanxi Provincial Government and Peking University jointly established the Peking University Shanxi Carbon-based Thin Film Electronics Research Institute. The institute is located at Shanxi University and will carry out research on carbon-based semiconductor materials and carbon-based thin film electronic technologies. It will strive to build a first-class domestic technology innovation platform and achievement transformation base through a model that combines government, industry, academia, research and application.

Antimonide Fourth Generation Semiconductor (Shanxi) Research Institute Project

On October 31, the 2020 China (Taiyuan) Artificial Intelligence Conference was held at the China (Taiyuan) Coal Trading Center. The Antimonide Fourth Generation Semiconductor (Shanxi) Research Institute project was signed at the event.