Samsung is developing a 160-layer 3D flash memory manufacturing process that may significantly improve

It is reported that following the 136-layer sixth-generation V-NAND flash memory launched last year, Samsung is currently developing 3D flash memory with 160 layers and above, which will become the basis for the seventh-generation V-NAND flash memory.

It is understood that the 136-layer sixth-generation V-NAND flash memory is Samsung's main mass production this year. Korean media reported that Samsung may significantly improve the manufacturing process, upgrading from the current single-stack to double-stack, in order to manufacture 3D flash memory with a higher number of layers.

Considering that Samsung occupies more than 1/3 of the NAND flash memory industry and is the strongest, it is expected that the 160+ layer stacked flash memory will be their first launch, continuing to maintain their advantage in flash memory technology and widening the gap with their competitors.

Just last week, my country's Yangtze Memory Technologies announced that it had mastered 128-layer 3D flash memory technology, and the QLC type capacity reached 1.33Tb, creating three world firsts. In addition, SK Hynix also announced last year that it was developing 176-layer stacked 4D flash memory; however, their flash memory structure and even naming are different from other manufacturers, and you can't just look at the number of layers.