Japan develops ultra-thin power-saving liquid crystal thin-film transistor manufacturing method

According to Japanese media reports, a research team from the Institute of Industrial Science at Osaka University (located in Ibaraki City, Osaka Prefecture) recently announced that it has developed a method of soaking silicone in high-concentration nitric acid to make thin-film transistors (TFTs) used in products such as mobile phones and LCD TV displays.

It is reported that the new production method can reduce the film thickness to 1/5~1/10 of the original, and significantly reduce the required electricity to 1/144 of the original. At the same time, it can achieve miniaturization and produce products that are 1/4 of the original size.

The research team said that the new "nitric acid oxidation method" directly oxidizes the silicone on the glass motherboard into a thin film by soaking it in 120 degrees and 68% nitric acid. This method can produce a uniform and high-density film, the thinnest of which can be up to 10 nanometers.

Professor Hikaru Kobayashi of Osaka University said: "The new method can easily improve TFT performance. I hope it will contribute to the development of environmentally friendly liquid crystal displays and improve the efficiency of solar cells."