Micron launches DDR5 memory based on 1β technology with a speed of up to 7,200MT/s

Micron Expands Industry-Leading 1Beta Technology to Server and PC Applications, Boosting Performance by 50 Percent

Shanghai, China, October 19 , 2023 – Micron Technology Inc. today announced that it has applied its industry-leading 1β (1-beta) process technology to the 16Gb capacity version of DDR5 memory . Micron’s 1β DDR5 DRAM has an in-system speed of up to 7,200 MT/s and is now shipping to all customers in the data center and PC markets. Micron’s DDR5 memory based on the 1β node uses advanced High-K CMOS device process, four-phase clock and clock synchronization technology ^{[ 1 ] , and has a performance improvement of up to 50% [ 2 ]} and a performance improvement of 33% per watt ^{[ 3 ]} compared to the previous generation .

As the number of CPU cores continues to increase to meet data center workload demands, the system demand for higher memory bandwidth and capacity has also increased significantly, thereby addressing the "memory wall" challenge while optimizing customers' total cost of ownership. Micron's 1β DDR5 DRAM supports computing power to scale to higher performance, supporting applications such as artificial intelligence (AI) training and reasoning, generative AI, data analytics, and in-memory databases (IMDBs) on data center and client platforms. The new 1β DDR5 DRAM product line offers existing module densities ranging from 4,800 MT/s to 7,200 MT/s to meet the application needs of data centers and clients.

“Volume production and shipment of 1β DDR5 DRAM for client and data center platforms marks an important industry milestone,” said Brian Callaway, corporate vice president of Core Compute Design Engineering at Micron. “We are working closely with our ecosystem partners and customers to drive market adoption of high-performance memory products.”

Micron's 1β technology has been applied to the company's wide range of memory solutions, including DDR5 RDIMMs and MCRDIMMs using 16Gb, 24Gb and 32Gb DRAM die; LPDDR5X using 16Gb and 24Gb DRAM die ; HBM3E and GDDR7. The new Micron 16Gb DDR5 memory will be available through direct sales and channel partners.

Industry Quotes:

“ASUS is a leader in high-performance notebooks for consumer and gaming applications. The transition of the memory subsystem to DDR5 is a key focus area for ASUS,” said Yizhang Chen, associate vice president of ASUS’s consumer product business unit. “We are pleased to offer ASUS and ROG notebooks with Micron’s 1β DDR5 memory to provide customers with an exceptional user experience.”

“Ampere’s cloud-native processors with Micron’s leading 1β DDR5 provide a best-in-class computing solution that meets the performance, scalability and power requirements of hyperscale data centers,” said Jeff Wittich, chief product officer at Ampere Computing. “Using Micron’s 1β DDR5 at up to 7,200MT/s on the AmpereOne™ platform will continue to advance AI, machine learning and all high-performance computing applications.”

“We are pleased to collaborate with Micron to leverage our industry-leading DDR5, LPDDR5X, GDDR6 and HBM3 IP system solutions with Micron’s advanced memory portfolio to enable next-generation platforms optimized for specific applications,” said Boyd Phelps, senior vice president and general manager of the IP Group at Cadence. “We have evaluated and validated our high-performance DDR5 IP at speeds up to 7,200MT/s using Micron’s advanced 1β DDR5 memory.”

[1] The JEDEC optional SRX/NOP clock synchronization (CLK_SYNC) feature is designed to mitigate the effects of duty cycle distortion between the host processor and DRAM in the four-phase clock architecture supported by Micron’s 1βnm devices.

[2] Based on theoretical maximum bandwidth, the device-level performance improvement is (7200-4800)/4800.

[3] Performance per Watt (theoretical maximum bandwidth, device level): Y52K 7200MT/s vs. Y32A 4800MT/s. Calculated based on predicted Gstress bus utilization of 7200MT/s (58%) and measured in SPR E-step system.