IR's new high performance PQFN power MOSFET series

International Rectifier (IR), a global leader in power semiconductors and management solutions, has introduced a series of 25 V and 30 V devices that use IR's latest HEXFET MOSFET silicon devices and a new high-performance PQFN 3 x 3 package to provide high-density, reliable and high-efficiency solutions for DC-DC converters in telecommunications, networking communications and high-end desktop and notebook applications.

IR's new high-performance PQFN 3 x 3 package is the result of improved production technology, providing up to 60% higher load current capability than standard PQFN 3 x 3 devices in a new compact footprint, while greatly reducing the overall package resistance, resulting in extremely low on-resistance (RDS(on)). In addition to low on-resistance, the new high-performance PQFN package enhances thermal conductivity and improves reliability, and meets industry standards and MSL1 moisture sensitivity testing.

This high-performance PQFN packaging technology is also available in a 5 x 6 mm footprint, eliminating the need to add additional footprint when designs require more current compared to standard PQFN 5 x 6 devices.

The series includes optimized devices for use as control MOSFETs, with low gate on-resistance (Rg) to reduce switching losses. For synchronous MOSFET applications, the new devices are available in FETKY (monolithic FET and Schottky diode) configurations, which shorten reverse recovery time to improve efficiency and EMI performance.

"The new series of high-performance PQFN packaged devices are optimized for DC-DC applications and are very reliable, flexible, and high-density solutions," said David Pan, IR's vice president of sales for Asia Pacific. "In addition, with IR's expanded PQFN offering, customers can now choose from a wide range of package combinations to best suit their designs."

The new device is less than 1 mm in height, is compatible with existing surface mount technology, has an industry-standard pinout, and is also compliant with the Restriction of Hazardous Substances Directive (RoHS).

Product Specifications

Part Number Package BVDSS (V) Max VGS (V) Typ/Max RDSon at 10V (mΩ) Typ/Max RDSon at 4.5V (mΩ) Typ Qg at 4.5V (nC) Extra

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Chip Function

The new series is available for volume orders now. Data and the MOSFET product selection tool are available on IR's website at www.irf.com .

Introduction to IR

International Rectifier (IR, NYSE: IRF) is a global leader in power semiconductors and management solutions. IR's analog and mixed-signal integrated circuits, advanced circuit devices, integrated power systems and devices are widely used to drive high-performance computing devices and reduce the energy consumption of motors (the world's largest energy consumer). They are the power management benchmark for many internationally renowned manufacturers to develop next-generation computers, energy-saving appliances, lighting equipment, automobiles, satellite systems, aerospace and defense systems.