How much better is silicon carbide than silicon for power management?

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Innovative technologies such as solar and wind power are replacing traditional fuel-based power plants at an accelerating rate and are already outpacing expensive “power plants” due to improvements in energy storage and collection methods, which offer significant cost savings.


With governments supporting renewable energy through policies and incentives, there are many opportunities for improvement and growth in public energy infrastructure and its associated grid structure.


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Older grid structures include one-way power delivery and limited energy generation, such as fossil fuels, hydroelectric and nuclear power plants. Recent advances in renewable energy generation and collection are allowing the same grid to scale its generation resources (wind and solar) while creating flexible bidirectional distribution to meet different needs and storage options.


Specifically, for solar energy, inverters are usually required, which convert the DC voltage generated by photovoltaic (PV) modules into AC voltage before passing it back to the grid. One of the most common methods is through a string inverter scheme, where the DC voltage from the solar panel is fed into a DC/DC step-up and then into a DC/AC inverter before being connected to the grid.


Figure 1 shows a typical solar string inverter block diagram, which includes gate drive, current sensing, and processing. Power delivery for this configuration is usually accomplished using IGBTs, high voltage FETs, and more commonly, power integrated modules (PIMs) containing integrated IGBTs and diodes.


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Figure 1: Solar string inverter block diagram


Electric vehicle charging is another industry with similarly high power demands. Electric vehicles are becoming more popular at an unprecedented rate. Unfortunately, their charging stations have lagged behind. The infrastructure for charging electric vehicles has not yet reached the same availability as gas stations, and charging times are much longer than refueling. A DC fast charging system operating at a power level of 350 kW can fully charge a vehicle in less than 10 minutes.


Figure 2 shows an example of a typical DC fast charging block diagram with the power path components and associated processing and peripherals.


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Figure 2: DC fast charging block diagram of an EV charging station


Silicon carbide (SiC)-based components have proven to offer better power transmission solutions for public energy infrastructure, such as power grids and EV charging stations. Such solutions, in turn, can provide improvements in terms of better conduction losses, leakage current, thermal management, surge capacity, and power density. Additionally, SiC-based technologies can increase overall efficiency, as well as improve reliability and reduce overall footprint. Industry-leading companies such as ON Semiconductor offer a range of SiC devices, so let’s explore these devices and delve deeper into some of their applications.


Why SiC technology is a better solution


Whether it’s solar, EV charging, or server applications, it’s been shown that SiC technology can outperform traditional silicon devices and modules, such as silicon IGBTs/MOSFETs. But let’s start with a topic that jumps to every designer’s mind: efficiency.


How does SiC improve efficiency? Many factors are involved, but primarily, SiC's advantages include higher operating temperature and frequency (up to 1 MHz) at lower conduction losses (Vf), as well as higher voltage and current ratings (up to 1800 V and 100 A), which in turn provide higher power efficiency and less heat dissipation than silicon MOSFETs.


See Figure 3 for how SiC technology delivers some of the highest overall power capabilities for high voltage and high current applications.


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Figure 3: Relationship between power capability and switching frequency of high-power transistors


Given the lower on-resistance and higher power capabilities of these SiC devices, SiC-based solutions translate into higher operating efficiency.


Figure 4 shows a SiC-based diode and MOSFET in series, which reduces conduction losses by up to 73% in a typical 5kW boost converter application.


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Figure 4: Example of using SiC components to achieve higher power efficiency in a 5kW boost converter


The footprint of a SiC-based circuit is typically much smaller due to lower size requirements for the associated inductors and capacitors. In fact, in some cases, it is 75% smaller due to higher switching frequencies. This allows for higher power density. Although SiC MOSFETs are typically 4 times more expensive than traditional silicon MOSFETs, the overall system cost goes down due to these smaller inductors and capacitors, while reducing the overall area.


In terms of product assembly and mechanical integration, ON Semconductor’s PIMs, such as the Q0/Q1/Q2PACK modules, where SiC devices are integrated to help reduce peripheral system development, have been proven to simplify the manufacturing process and reduce development risk while allowing for faster time to market.


In addition, discrete, non-integrated solutions usually require more time to design and install thermal systems, such as isolation pads and heat sinks, while also bringing the risk of poor thermal contact. PIM solutions can simplify the assembly process, thereby reducing time/cost and improving reliability, while also making the final product more compact due to the advantages in power density.


Figure 5 shows a comparison between the discrete solution and the PIM module assembly process.


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Figure 5: Assembly comparison between discrete solution and ON Semiconductor PIM solution


SiC Power Solutions from ON Semiconductor


ON Semiconductor's PIM modules provide faster switching speeds, higher power efficiency and higher power density. These solutions can also reduce system cost and size, but that's not all. PIM modules are not always preferred over discrete components, mainly based on the power rating of the application and performance and cost considerations. Therefore, ON Semiconductor provides both discrete and PIM SiC solutions.


Figure 6 shows how to choose between a discrete solution or a PIM solution.


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Figure 6: When to use a discrete or modular solution


High voltage auxiliary supplies for applications such as UPS, motor drives or PV inverters typically have a DC bus voltage of 300 VDC to 1000 VDC, which makes it difficult to integrate low voltage auxiliary supplies for displays, fans or heaters. But SiC MOSFETs have a higher blocking voltage and a wider input voltage range, allowing greater system flexibility and functionality. In addition, as mentioned in the SiC Advantages section, higher frequencies and lower on-resistances result in smaller, higher power density solutions. However, let's look at a direct comparison between an ESBC configuration power supply running at 75 kHz and a SiC power supply running at 300 kHz. The SiC power supply is smaller in size (by about half), has 20% more power output, and is significantly more efficient.


See Figure 7 for a comparison of size and efficiency.


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Figure 7: Comparison of high voltage SiC and ESBC


ON Semiconductor offers a variety of switch technologies and package types, as well as isolated drivers, depending on the application.


See Figure 8 for ON Semiconductor’s complete SiC device portfolio.


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Figure 8: ON Semiconductor SiC product portfolio

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