ROHM Develops EcoGaN™ Power Stage IC "BM3G0xxMUV-LB"

ROHM has developed the EcoGaN™ Power Stage IC "BM3G0xxMUV-LB",

Helps reduce the loss and size of servers and AC adapters, etc.!

～ By replacing the existing Si MOSFET, the device volume can be reduced by about 99% and the power loss can be reduced by about 55%～

ROHM (headquartered in Kyoto, Japan), a world-renowned semiconductor manufacturer, has developed the "BM3G0xxMUV-LB" (BM3G015MUV-LB, BM3G007MUV-LB) Power Stage IC that integrates a 650V GaN HEMT*2 and a gate drive driver for primary-side power supplies*1 of industrial equipment such as data servers and consumer electronics such as AC adapters.

In recent years, in order to achieve a sustainable society, higher energy-saving requirements have been put forward for power supplies of consumer electronics and industrial equipment. In response to this demand, GaN HEMT is expected to be a device that is very helpful in improving power conversion efficiency and realizing device miniaturization. However, compared with Si MOSFET, the gate processing of GaN HEMT is difficult and must be used in conjunction with a driver to drive the gate. In this market context, ROHM has developed a Power Stage IC that integrates power semiconductors - GaN HEMTs and analog semiconductors - gate drivers by combining its two core technical advantages of power and analog. The advent of this product makes it easy to install GaN devices, which are called "next-generation power semiconductors."

The new product integrates the next-generation power device 650V GaN HEMT, a dedicated gate driver that can maximize the performance of GaN HEMT, new functions, and peripheral components. In addition, the new product supports a wider drive voltage range (2.5V to 30V) and has the performance to support various controller ICs for primary-side power supplies, so it can replace existing Si MOSFETs (Super Junction MOSFET*3/hereinafter referred to as "Si MOSFET"). Compared with Si MOSFET, the device volume can be reduced by about 99% and the power loss can be reduced by about 55%, so lower loss and smaller volume can be achieved at the same time.

The new product has started mass production in June 2023 (sample price 4,000 yen/piece, excluding tax). In addition, the new product and the corresponding three evaluation boards (BM3G007MUV-EVK-002, BM3G007MUV-EVK-003, BM3G015MUV-EVK-003) have started online sales and can be purchased on e-commerce platforms such as Ameya360.

＜Product Lineup＞

The new products support a wider drive voltage range (2.5V to 30V) and have short propagation delays and fast startup times, thus supporting various controller ICs in primary-side power supplies.

＜Application Examples＞

Suitable for various applications with built-in primary-side power supply (AC-DC or PFC circuit).

Consumer electronics: white goods, AC adapters, computers, TVs, refrigerators, air conditioners

Industrial equipment: servers, OA equipment

＜E-commerce sales information＞

E-commerce platform: Ameya360

The products and evaluation boards will also be gradually sold on other e-commerce platforms.

(Sales start: July 2023)

•Product Information

Product Model:

BM3G015MUV-LB, BM3G007MUV-LB

・Evaluation board information

Evaluation board model:

BM3G007MUV-EVK-002 (PFC 240W)

BM3G007MUV-EVK-003

BM3G015MUV-EVK-003

＜What is EcoGaN™＞

EcoGaN™ is a ROHM GaN device that maximizes the performance of GaN to help application products achieve further energy conservation and miniaturization. This series of products can help application products further reduce power consumption, achieve miniaturization of peripheral components, reduce design time and the number of components, etc.

・EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.

＜Terminology＞

*1) Primary power supply

In industrial equipment and consumer electronics, power supplies and output units are isolated by transformers to ensure the safety of the application products. The power supply side on both sides of the isolation is called the "primary side (primary)", the output side is called the "secondary side (secondary)", and the power supply part on the primary side is called the "primary power supply".

*2) GaN HEMT

GaN (Gallium Nitride) is a compound semiconductor material used in the next generation of power devices. Compared with the common semiconductor material Si (Silicon), it has better physical properties. Currently, more and more applications are beginning to adopt this material because of its excellent high-frequency characteristics.

HEMT is the abbreviation of High Electron Mobility Transistor.

*3) Super Junction MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)

MOSFET is a type of transistor, which can be further divided into DMOSFET, Planar MOSFET, Super Junction MOSFET and other types of products according to the different device structures. Compared with DMOSFET and Planar MOSFET, Super Junction MOSFET performs better in voltage resistance and output current, and has less loss when handling high power.