Diodes Incorporated Announces First Silicon Carbide Schottky Barrier Diode (SBD)

Diodes Incorporated Announces First Silicon Carbide Schottky Barrier Diode (SBD)

[February 8, 2023, Plano, Texas, USA] Diodes Incorporated today announced the launch of its first silicon carbide (SiC) Schottky barrier diode (SBD) . The product portfolio includes the DIODES DSCxxA065 series, with a total of eleven products with a 650V rated voltage (4A, 6A, 8A and 10A), and the DIODES DSCxx120 series, with a total of eight products with a 1200V rated voltage (2A, 5A and 10A).

The advantages of these wide bandgap SBDs include significantly improved efficiency and high temperature reliability, while responding to market demands for lower system implementation costs and reduced maintenance requirements. These devices are suitable for AC-DC, DC-DC and DC-AC step-down converters, photovoltaic inverters, uninterruptible power systems and industrial motor drive product applications. In addition, this series of devices are also suitable for various other circuits, such as boost converters for power factor correction purposes.

These SiC devices have high efficiency performance, outperforming traditional silicon products, and can bring unprecedented product performance advantages to power supply designers, such as:

• Low capacitance charge (QC) reduces switching losses to a very low level, thus improving the efficiency of high-speed switching product applications. Suitable for circuit designs with high power density and small total solution size.

• Low forward voltage (VF) further improves efficiency, reduces power losses and operating costs.

• Reduced heat dissipation helps reduce the overall system cooling budget.

• High surge current capability improves robustness for better system reliability, while excellent thermal performance reduces construction costs.

This series of devices offers three package options including surface mount TO252-2 (WX type), through hole TO220AC (WX type) and ITO220AC (WX-NC type).