Diodes 100V MOSFET H-bridge uses 5mm x 4.5mm package to effectively save space

Publisher:CrystalDawnLatest update time:2016-02-16 Source: EEWORLDKeywords:Diodes Reading articles on mobile phones Scan QR code
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The new 100V full H-bridge DMHC10H170SFJ from Diodes Incorporated integrates dual N-channel and P-channel MOSFETs into the tiny DFN5045 package (5mm x 4.5mm). This configuration reduces component count and saves board space, which is particularly important for applications that require multiple devices, including ultrasonic transducers in a range of industrial inspection systems or maritime sonar equipment. Other common applications include DC drive motors for cooling fans in 48V telecommunications equipment and inductive loads such as coils on wireless charging pads.

 
The DMHC10H170SFJ features a 100V drain-source breakdown voltage (BVDSS), providing ample headroom to support 48V electrical rails and industrial applications. It also features a 5V gate voltage to simplify the design of direct logic-level interfaces to microcontrollers. The device's peak pulse current rating of 11A enables it to handle the inrush current when the drive coil is energized, which is typically five times greater than the typical operating current of a DC motor.
 
The new product replaces four SOT23 or two SO-8 packaged devices, allowing multiple ultrasonic transducers to be deployed in a compact array. For example, a group of 1,024 transducers must be driven individually by an H-bridge to provide a steerable, focused beam for a phased array system. Such systems are used to inspect material production processes and are suitable for maritime echolocation systems.
 
The DMHC10H170SFJ uses the V-DFN5045-12 package, providing a unique ultra-small size solution on the market. The new product is shipped in batches of 3,000 units.
 
Keywords:Diodes Reference address:Diodes 100V MOSFET H-bridge uses 5mm x 4.5mm package to effectively save space

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