Common high-power LED chip production process

 LED chip production process

　　In order to obtain high-power LED devices, it is necessary to prepare a suitable high-power LED panel light chip. The international community usually summarizes the manufacturing methods of high-power LED chips as follows:

　　① Increase the size of the light. The single LED light-emitting area and effectively increase the amount of current flowing through the evenly distributed layer TCL to achieve the desired flux. However, simply increasing the light-emitting area does not solve the problem of heat dissipation and cannot achieve the desired effect and flux in practical applications.

　　② Silicon substrate flip chip method. Eutectic solder First, prepare a large LED panel light chip and prepare a suitable size, on the silicon substrate and silicon substrate, use the gold eutectic solder layer and the conductive layer conductor (ultrasonic gold wire ball joint), and use the mobile device to solder the LED chip and the large size silicon substrate together with the eutectic solder. Such a structure is more reasonable, not only to consider this problem, taking into account the problem of light and heat, which is the mainstream of high-power LED production. Lumileds, USA, developed a different flip-chip power AlGaInN (FCLED) structure in 2001. The manufacturing process is as follows: first, a P-type GaN epitaxial film is deposited on the top layer with a thickness of more than 500A, and the reflective Niau ohmic contact is returned, and then selectively etched, using a mask, on the P-type layer and the multi-quantum well active layer to expose the N-type layer deposition, and after etching, an N-type ohmic contact layer 1 is formed. The P-type ohmic contact on one side of the 1mm×1mm is formed, and the N-type ohmic contact is inserted in a comb shape, so that the chip size can be shortened, so as to minimize the support and diffusion resistance of the InGaAlN ESD protection diode (ESD) of the silicon chip mounted with an inverted solder bump.

　　③ Ceramic plate flip chip method. The crystal structure of the LED panel light chip of the general device is the next large one. In the eutectic solder layer and conductive layer of the ceramic plate and the ceramic substrate, the corresponding leads are generated in the area, and the welding electrodes are used to weld the crystal LED chip and the large-size ceramic thin plate. Welding equipment. Such a structure is a problem that needs to be considered, and it is also a problem that needs to be considered. The use of high thermal conductivity ceramic plates, ceramic plates, has a very good heat dissipation effect and a relatively low price. It is more suitable for the current basic packaging materials and space reserved for future integrated circuit integration.

　　④ Sapphire substrate transition method. After removing the PN junction from the sapphire substrate, the manufacturer grows the InGaN chip on the sapphire substrate, and then connects the traditional quaternary materials to manufacture the lower electrode of the large-scale structured blue LED chip through conventional methods.

　　⑤AlGaInN silicon carbide (SiC) backlight method. Cree, an American company, is the world's only AlGaInN ultra-high brightness LED manufacturer on silicon carbide substrates. Over the years, the architecture of the AlGaInN/SICA chips produced has been continuously improved and the brightness has been increased. Since the P-type and N-type electrodes are located at the top and bottom of the chip respectively, a single wire bonding is used, which has better compatibility and ease of use, thus becoming another mainstream product development AlGaInNLED.