Designing Greener, Smaller Power Supplies with Power MOSFET Family Devices

Publisher:liliukanLatest update time:2014-01-17 Keywords:MOSFET Reading articles on mobile phones Scan QR code
Read articles on your mobile phone anytime, anywhere

TrenchFET® IV is the latest generation in the TrenchFET power MOSFET family. Compared to TrenchFET III, TrenchFET IV has reduced on-resistance (RDS(ON)) and gate charge (QG, QGD) values, reducing losses in synchronous DC/DC converters. In the past, lower RDS(ON) was usually traded off with higher gate charge. But TrenchFET IV uses a new high-density design that achieves optimized gate charge levels and lower RDS(ON). Table 1 compares the TrenchFET IV product SiRA00DP and the previous state-of-the-art SiR812DP TrenchFET Gen III power MOSFET. The new device has 30% and 39% lower RDS(ON) and Qg, respectively.

Improving the on-resistance and gate charge product (figure of merit, FOM) can not only improve the overall system efficiency, but also enable the DC/DC converter to achieve higher power density and higher switching frequency. To verify the efficiency improvement from TrenchFET III to TrenchFET IV, we tested two TrenchFET IVs, SiRA14DP and SiRA04DP, using a 19V input voltage to achieve a 1V output.

Figure 1 demonstrates the use of a TrenchFET IV as the “control FET” in a synchronous buck converter, where the TrenchFET IV is 0.5% more efficient than the TrenchFET III at currents up to 27A. Figure 2 shows the efficiency improvement of using a TrenchFET IV as the “sync FET” in a synchronous buck converter. Switching to a TrenchFET IV improves efficiency by more than 1.5% and each MOSFET can handle more output current. The higher output current handling capability enables designers to reduce the number and size of MOSFETs required to handle a given current level.

Figure 3 shows that TrenchFET IV products can achieve higher efficiency in a 66% smaller package than TrenchFET III. The SiSA04DN is a TrenchFET IV device in a PowerPAK® 1212-8 package with a footprint of 9mm2, and the SiR818DP is a TrenchFET III device in a 30mm2 PowerPAK® SO‑8 package. TrenchFET IV reduces power losses by up to 17% over TrenchFET III products.

The improvement in losses is shown in Figure 4, especially at the peak current of 15A where the loss is significantly reduced.

in conclusion:

TrenchFET IV products are used in synchronous buck converters to improve overall system efficiency and power density. The higher performance of these products also enables smaller designs and the potential for fewer components . In short, the benefits of these products are greener, more efficient and smaller power supply designs.

Keywords:MOSFET Reference address:Designing Greener, Smaller Power Supplies with Power MOSFET Family Devices

Previous article:The role of the reactor
Next article:A benefit for photography enthusiasts: HDR rendering analysis of CMOS image sensors

Recommended ReadingLatest update time:2024-11-16 15:23

Jiejie Microelectronics: Annual chip production capacity of 1.6 million pieces, to expand MOSFET, IGBT and other product lines
In recent years, Qidong, Jiangsu has issued supporting policies such as "Several Policy Measures on Promoting the High-Quality Development of the Private Economy" and implemented the "1521" large industrial enterprise cultivation plan to help enterprises implement intelligent transformation. Jiangsu Jiejie Microelec
[Mobile phone portable]
Jiejie Microelectronics: Annual chip production capacity of 1.6 million pieces, to expand MOSFET, IGBT and other product lines
Design of step-down DC-DC converter with high input voltage
Common DC-DC applications are mostly suitable for lower Vin/Vout voltages (less than 30V-40V). It is rare to have a higher voltage input. This article introduces a buck converter that uses TL494 as the controller and can work at 60V input. The circuit can be used for higher voltage by modifying the part speci
[Power Management]
Design of step-down DC-DC converter with high input voltage
Boosting Output Current Using Current Sensing and MOSFETs
A previous Design Idea described a programmable current source using the National Semiconductor LM317 adjustable three-terminal regulator. Although the circuit can program the output current, the load current flows through a BCD (binary-decimal) switch. However, you will find it difficult to buy a BCD switch that ca
[Power Management]
Boosting Output Current Using Current Sensing and MOSFETs
WPG World Peace Group launches motor driver solution based on NCP1632
WPG Holdings, a leading semiconductor component distributor dedicated to the Asia-Pacific market, announced that its subsidiary WPI has launched a 1KW motor driver solution based on ON Semiconductor's NCP1632 Interleaved PFC.   Figure 1- A demonstration board of the motor driver solution launched by WPG based on O
[Embedded]
WPG World Peace Group launches motor driver solution based on NCP1632
Vishay launches new 650 VE series power MOSFETs with industry-leading performance levels
Fourth-generation devices increase rated power and power density, reduce conduction and switching losses, and thereby improve energy efficiency. MALVERN, Pennsylvania, USA, and Shanghai, China - September 4, 2023 - Recently, Vishay Intertechnology, Inc. announced the launch of a new fourth-generation 650 VE series p
[Power Management]
Vishay launches new 650 VE series power MOSFETs with industry-leading performance levels
Overcoming the technical bottleneck of high brightness (HB) LED integration solutions in automotive systems
introduction Currently, automobile manufacturers are gradually replacing automotive lighting systems from incandescent lamps and CCFLs (cold cathode fluorescent lamps) to HB (high brightness) LEDs. These HB LEDs are widely used in the backlighting of navigation and entertainment equipment displays and in au
[Automotive Electronics]
Overcoming the technical bottleneck of high brightness (HB) LED integration solutions in automotive systems
Infineon Launches Industry’s Lowest On-Resistance 80 V MOSFET OptiMOS™ 7 for Automotive Applications
4月15日,英飞凌科技股份公司推出其最新先进功率MOSFET 技术—— OptiMOS™ 7 80 V的首款产品IAUCN08S7N013。该产品的特点包括功率密度显著提高,和采用通用且稳健的高电流SSO8 5 x 6 mm² SMD封装。这款OptiMOS™ 7 80 V产品非常适合即将推出的 48 V板网应用。它专为满足高要求汽车应用所需的高性能、高质量和稳健性而打造,包括电动汽车的汽车直流-直流转换器、48 V电机控制(例如电动助力转向系统(EPS))、48 V电池开关以及电动两轮车和三轮车等。 TDSON Automotive OptiMOS™ 7 Compared with
[Automotive Electronics]
Infineon Launches Industry’s Lowest On-Resistance 80 V MOSFET OptiMOS™ 7 for Automotive Applications
Latest Power Management Articles
Change More Related Popular Components

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews


Room 1530, 15th Floor, Building B, No.18 Zhongguancun Street, Haidian District, Beijing, Postal Code: 100190 China Telephone: 008610 8235 0740

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号